MCAC80N06Y Features Trench Power MV MOSFET Technology Very Low On-Resistance RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C (Note 2) Thermal Resistance: 15C/W Junction to Ambient(t 10s) DFN5060 Thermal Resistance: 43C/W Junction to Ambient(Steady-State) (Note24444,3) Thermal Resistance: 1.47C/W Junction to Case(Steady-State) Parameter Symbol Rating Unit Drain-Source Voltage V 60 V DS D H B A Gate-Source Volltage V 20 V GS T =25C 80 A PIN 1 Continuous Drain C G I J D (Note 3) C Current T =100C 58 A N C (Note 4) I 320 A Pulsed Drain Current DM E F (Note 5) E 450 mJ Single Pulse Avalanche Energy AS K T =25C 85 W Total Power C P D M (Note 2) Dissipation T =100C 34 W L C Note: 1.Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2 2.The Value of R is Measured with the Device Mounted on 1in FR4 Board with JA DIMENSIONS 2oz. Copper, in a Still Air Environment with T =25C. The Power Dissipation P is A DSM INCHES MM Based on R t 10s and the Maximum Allowed Junction Temperature of 150C. The JA DIM NOTE MIN MAX MIN MAX Value in Any Given Application Depends on the User s Specific Board Design. A 0.031 0.047 0.80 1.20 3.The R is the Sum of the Thermal Impedance from Junction to Case R and Case JA JC 0.010 0.254 B TYP. to Ambient. C 0.193 0.222 4.90 5.64 4.The Maximum Current Rating is Package Limited. D 0.232 0.250 5.90 6.35 E 0.148 0.167 3.75 4.25 5.Single Pulse Width Limited by Junction Temperature T =175C. J(MAX) F 0.126 0.154 3.20 3.92 Internal Structure G 0.189 0.213 4.80 5.40 H 0.222 0.239 5.65 6.06 K 0.045 0.059 1.15 1.50 D D D D 8 7 6 5 J 0.012 0.020 0.30 0.50 L 0.046 0.054 1.17 1.37 M 0.012 0.028 0.30 0.71 N 0.016 0.028 0.40 0.71 1 2 3 4 S S S G Rev.3-4-07302021 1/4 MCCSEMI.COMMCAC80N06Y Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 65 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS V =60V, V =0V 1 DS GS Zero Gate Voltage Drain Current I A DSS V =60V, V =0V,T =55C 5 DS GS J V V =V , I =250A Gate-Threshold Voltage 1.1 1.7 2.5 V GS(th) DS GS D V =10V, I =20A 3.0 4.2 GS D R Drain-Source On-Resistance m DS(on) V =4.5V, I =20A 3.9 5.2 GS D Forward Tranconductance g V =5V, I =40A 30 S FS DS D V V =0V, I =40A Diode Forward Voltage 0.85 0.99 V SD GS S Continuous Body Diode Current I 80 A S Dynamic Characteristics Input Capacitance C 3980 iss C V =30V,V =0V,f=1MHz Output Capacitance 690 pF oss DS GS C Reverse Transfer Capacitance 24 rss R V =0V,V =0V,f=1MHz Gate Resistance 2.5 g DS GS Switching Characteristics Total Gate Charge Q V =30V,V =4.5V,I =40A 32 g DS GS D Q Total Gate Charge 67 g V =30V,V =10V,I =40A Gate-Source Charge Q 12 nC DS GS D gs Q Gate-Drain Charge 8.5 gd Reverse Recovery Chrage Q 60 rr I =I , di/dt=500A/s F S t Reverse Recovery Time 48 rr Turn-On Delay Time t 15 d(on) t ns Turn-On Rise Time 8 r V =10V, V =15V, R =2.5, GS DS L R =3 GEN Turn-Off Delay Time t 48 d(off) t Turn-Off Fall Time 12 f Rev.3-4-07302021 2/4 MCCSEMI.COM