MCAC85N06Y Features Split Gate Trench MOSFET technology Excellent Package for Heat Dissipation High Density Cell Desihn for Low R DS(on) N-CHANNEL Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C DFN5060 (Note 2) Thermal Resistance: 55C/W Junction to Ambient Thermal Resistance: 1.2C/W Junction to Case Parameter Symbol Rating Unit D H B Drain-Source Voltage V 60 V DS A Gate-Source Volltage V 20 V GS PIN 1 G Drain Current I 130 J A D C N T =25C 85 A C Continuous Drain I D E (Note 3) Current T =100C 54 A C F (Note 4) I 390 A Pulsed Drain Current DM K (Note 5) E 270 mJ Single Pulse Avalanche Energy AS M L (Note 6) P 105 W Total Power Dissipation D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2 2. The Value of R is Measured with the Device Mounted on 1 in FR-4 Board with 2oz. JA DIMENSIONS Copper, in a Still Air Environment with T =25C. A INCHES MM DIM NOTE 3. The Maximum Current Rating is Package Limited. MIN MAX MIN MAX 4. Pulse Width Limited by Max. Junction Temperature. A 0.031 0.047 0.80 1.20 0.010 0.254 5. V =50 V, R =25 , L=0.5mH, starting T =25C. B TYP. DD G J C 0.193 0.222 4.90 5.64 6. PD is Based on Max. Junction Temperature, Using Junction-Case Thermal Resistance. D 0.232 0.250 5.90 6.35 E 0.148 0.167 3.75 4.25 Internal Structure F 0.126 0.154 3.20 3.92 G 0.189 0.213 4.80 5.40 D D D D H 0.222 0.239 5.65 6.06 8 7 6 5 K 0.045 0.059 1.15 1.50 J 0.012 0.020 0.30 0.50 L 0.046 0.054 1.17 1.37 M 0.012 0.028 0.30 0.71 N 0.016 0.028 0.40 0.71 1 2 3 4 S S S G Rev.3-3-12012020 1/4 MCCSEMI.COMMCAC85N06Y Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =250A 1 1.8 2.5 V GS(th) DS GS D V =10V, I =20A 2.5 3 GS D R Drain-Source On-Resistance m DS(on) V =4.5V, I =10A 3.5 4.5 GS D V V =0V, I =20A V Diode Forward Voltage 1.2 SD GS S Continuous Body Diode Current I 85 A S (Note 7) Dynamic Characteristics Input Capacitance C 3350 iss C V =30V,V =0V,f=1MHz pF Output Capacitance 1666 oss DS GS Reverse Transfer Capacitance C 77.7 rss Q Total Gate Charge 66.1 g V =30V,V =10V,I =25A Q Gate-Source Charge DS GS D 10.7 gs nC Q Gate-Drain Charge 10.9 gd Q Reverse Recovery Chrage 73 rr I =25A, di/dt=100A/s S t Reverse Recovery Time 68 rr t Turn-On Delay Time 22.5 d(on) Turn-On Rise Time t 6.7 ns r V =10V,V =30V,I =25A GS DD D R =2 GEN t Turn-Off Delay Time 80.3 d(off) Turn-Off Fall Time t 26.9 f Note 7.Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM