MCB85N06Y Features Fast Switching Improved dv/dt Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix-H MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +175C Storage Temperature Range: -55C to +175C D2-PAK (Note 1) Thermal Resistance: 1.76C/W Junction to Case S Parameter Symbol Rating Unit A V Drain-Source Voltage V 60 V DS 1 Gate-Source Volltage V 20 V G GS 2 4 B 3 T =25C 85 A C Continuous Drain Current I D D T =100C 59 A C C Pulsed Drain Current I 150 A DM H w (Note 2) E 290 mJ Single Pulse Avalanche Energy AS E J K Total Power Dissipation P 85 W D Note: 1.Surface Mounted on FR4 Board, t 10 sec. DIMENSIONS 2.EAS Condition: T =25C,V =30V,V =10V,L=0.5mH,R =25. J DD G g INCHES MM DIM NOTE MIN MAX MIN MAX A 0.331 0.370 8.40 9.40 B 0.378 0.417 9.60 10.60 Internal Structure C 0.165 0.189 4.20 4.80 D 0.027 0.037 0.68 0.94 D E 0.045 0.055 1.14 1.40 G 0.010 2.54 TYP. H 0.096 0.134 2.43 3.40 J 0.011 0.025 0.28 0.64 K 0.071 0.131 1.80 3.32 1.GATE G 2.DRAIN S 0.575 0.625 14.60 15.87 3.SOURCE V 0.042 0.058 1.07 1.47 4.DRAIN W 0.000 0.010 0.00 0.25 S Suggested Solder Pad Layout .638 16.20 .065 Inches 1.65 mm .420 10.66 .070 1.78 .138 3.50 .330 8.38 Rev.3-3-12152020 1/4 MCCSEMI.COMMCB85N06Y Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS (Note 3) V V =V , I =250A 1 1.6 2.4 V Gate-Threshold Voltage GS(th) DS GS D (Note 3) R V =10V, I =30A m Drain-Source On-Resistance 11.3 13 DS(on) GS D (Note 3) g V =10V, I =5.5A 30 S Forward Tranconductance FS DS D (Note 4) Dynamic Characteristics Input Capacitance C 2498 iss C V =25V,V =0V,f=1MHz pF Output Capacitance 185 oss DS GS Reverse Transfer Capacitance C 80 rss Q Total Gate Charge 36 g V =30V,V =10V,I =30A Gate-Source Charge Q 9.6 nC DS GS D gs Q Gate-Drain Charge 6.6 gd t Turn-On Delay Time 12 d(on) t Turn-On Rise Time 5.2 r V =30V,I =2A,R =1 DD D L ns V =10V,R =3 GS GEN t Turn-Off Delay Time 38 d(off) t Turn-Off Fall Time 27 f Drain-Source Body Diode Characteristics Continuous Body Diode Current I 85 A S (Note 3) V I =20A, V =0V 1.4 V Body Diode Voltage SD S GS Reverse Recovery Time t 280 ns rr T =25C, I =30A, J F (Note 3) di/dt=100A/s Q Reverse Recovery Charge 2.8 C rr Forward Turn-On Time t Intrinsic Turn-On Time is Negligible (Turn-On is Dominated by LS+LD) on Note 3. Pulse Test : Pulse Width 300s, Duty Cycle 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12152020 2/4 MCCSEMI.COM