MCM1216A Features Trench Power LV MOSFET technology High Density Cell Design Low R DS(on) High Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 6.9C/W Junction to Case Parameter Symbol Rating Unit Drain-Source Voltage V -20 V DS & Gate-Source Volltage V 10 V GS ( T =25C -16 A C % I Continuous Drain Current D T =70C -12.8 A C (2) I -64 A Pulsed Drain Current DM Total Power Dissipation P 18 W D / . Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Repetitive Rating Pulse Width Limited by Maximum Junction Temperature. * + ) Internal Structure - D D S 6 5 4 ,0(16,216 ,0 127( 0,1 0 0,1 0 30 4 5 5 % 5() 1 2 3 & Marking: Q1216 D D G ( ) * + - . / 7<3 Rev.3-3- 1120 2020 1/5 MCCSEMI.COM 00 ,1&+(6 )1 - MCM1216A Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -20 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =10V 100 nA GSS DS GS I V =-20V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS Gate-Threshold Voltage V V =V , I =-250A -0.4 -0.62 -1 V GS(th) DS GS D V =-4.5V, I =-10A 13 17 m GS D R Drain-Source On-Resistance V =-2.5V, I =-6.5A 16 21 m DS(on) GS D V =-1.8V, I =-4A 20 30 m GS D Diode Characteristics I Continuous Body Diode Current -16 A S Diode Forward Voltage V V =0V, I =-13A -0.8 -1.2 V SD GS S Dynamic Characteristics C Input Capacitance 2050 iss C V =-10V,V =0V,f=1MHz Output Capacitance 411 pF oss DS GS C Reverse Transfer Capacitance 362 rss Q Total Gate Charge 30 g Q V =-15V,V =-10V,I =-9.1A nC Gate-Source Charge DS GS D 5.3 gs Gate-Drain Charge Q 7.6 gd t Turn-On Delay Time 14 d(on) Turn-On Rise Time t 20 r V =-10V,V =-15V, I =-6A, GS DS D ns R =2.5 GEN t Turn-Off Delay Time 95 d(off) Turn-Off Fall Time t 65 f Rev.3-3-11202020 2/5 MCCSEMI.COM