MCQ08N06 Features High Density Cell Design for Low R DS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Dual N-Channel Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Power MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +175C Storage Temperature Range: -55C to +175C (Note 1) Thermal Resistance: 107C/W Junction to Ambient SOP-8 Parameter Rating Symbol Unit B D Drain-Source Voltage V 60 V DS Gate-Source Volltage V 20 V GS A C Continuous Drain Current I 8 A D F (Note 2) E I 40 Pulsed Drain Current A DM K Total Power Dissipation P 1.4 W D Note: 2 H J 1.The Value of R is Measured with the Device Mounted on 1 in FR-4 JA Board with 2oz. Copper, in a Still Air Environment with T =25C. A 2.Repetitive Rating Pulse Width Limited by Maximum Junction Temperature. G DIMENSIONS INCHES MM DIM NOTE Internal Structure MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/3 MCCSEMI.COMMCQ08N06 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =48V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =250A 1 1.7 3 V GS(th) DS GS D V =10V, I =10A 16 19.5 GS D R Drain-Source On-Resistance m DS(on) V =4.5V, I =6A 21 28 GS D V V =0V, I =-8A V Diode Forward Voltage 1.2 SD GS S Continuous Body Diode Current I 8 A S Dynamic Characteristics Input Capacitance C 864 iss C V =30V,V =0V,f=1MHz pF Output Capacitance 282 oss DS GS Reverse Transfer Capacitance C 27 rss Q Total Gate Charge 17 g V =30V,V =10V,I =10A Q nC Gate-Source Charge DS GS D 3.1 gs Q Gate-Drain Charge 4.3 gd t Turn-On Delay Time 3.4 d(on) t Turn-On Rise Time 5.2 r V =10V, V =30V, GS DS ns R =6, I =10A G D t Turn-Off Delay Time 13 d(off) Turn-Off Fall Time t 7 f t Reverse Recovery Time 22 ns RR I =10A, di/dt=100A/s F Reverse Recovery Charge Q 11 nC RR Rev.3-2-12012020 2/3 MCCSEMI.COM