MCQ4828A Features Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Dual Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix-H Power MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOP-8 Thermal Resistance: 100C/W Junction to Ambient B D Parameter Symbol Rating Unit A C Drain-Source Voltage V 60 V DS F Gate-Source Volltage V 20 V E GS (Note1) K Drain Current (t 10s) I 4.5 A D (Note2) I 20 A DM Pulsed Drain Current H J (Note2) Repetitive Avalenche Energy 0.1mH 18 mJ E E AR, AS 1.25 Total Power Dissipation P W D G DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 Internal Structure: C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 D1 D1 D2 D2 8 7 6 5 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 1 2 3 4 K S1 G1 S2 G2 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/4 MCCSEMI.COMMCQ4828A Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V V =0V, I =250A 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS (Note 3) V V =V , I =250A 1 2.1 3 V Gate-Threshold Voltage GS(th) DS GS D V =10V, I =4.5A 40 56 GS D (Note 3) R m Drain-Source On-Resistance DS(on) V =4.5V, I =3A 55 77 GS D (Note 3) g V =5V, I =4.5A 6 S Forward Tranconductance FS DS D (Note 3) V V =0V, I =1A 1 V Diode Forward Voltage SD GS S (Note 4) Dynamic Characteristics Input Capacitance C 540 iss V =30V,V =0V,f=1MHz Output Capacitance C 60 pF DS GS oss Reverse Transfer Capacitance C 25 rss (Note 4) Switching Characteristics Turn-On Delay Time t 4.7 d(on) Turn-On Rise Time t 2.3 r V =10V, V =30V GS DS ns R =3, R =6.7 GEN L Turn-Off Delay Time t 15.7 d(off) Turn-Off Fall Time t 1.9 f Total Gate Charge (10V) 10.5 Q g Total Gate Charge (4.5V) 5.5 V =10V, V =30V GS DS nC I =4.5A D Q Gate-Source Charge 1.6 gs Q Gate-Drain Charge 2.2 gd Notes : 1. The Value In Any Given Application Depends On The Users Specific Board Design. 2. Repetitive Rating : Pulse Width Limited by Junction Temperature. 3. Pulse Test : Pulse Width300s, Duty Cycle0.5%. 4. These Parameters Have No Way to Verify. Rev.3-2-12012020 2/4 MCCSEMI.COM