MCQ 7328 Features Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Dual Moisture Sensitivity Level 1 P-Channel Halogen Free Available Upon Request By Adding Suffix-H MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOP-8 (Note 2) Thermal Resistance: 89C/W Junction to Ambient B D Parameter Symbol Rating Unit Drain-Source Voltage V -30 V DS A C Gate-Source Volltage V 20 V GS F Drain Current I -8 A E D (Note 1) I -32 A Pulsed Drain Current DM K (Note 2) P 1.4 W Total Power Dissipation D H J Notes : 1. Pulse Width Limited By Junction Temperature. 2. Surface Mounted on 1 x1 FR4 Board, t10s. G DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 Internal Structure: C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 D1 D2 D2 D1 E 0.007 0.010 0.17 0.25 7 6 5 8 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 1 23 4 0 8 0 8 G1 S2 G2 Marking: Q7328 S1 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2- 12012020 1/4 MCCSEMI.COMMCQ7328 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -30 V (BR)DSS GS D I V =0V, V =20V Gate-Source Leakage Current 100 nA GSS DS GS I V =-24V, V =0V Zero Gate Voltage Drain Current -15 A DSS DS GS V V =V , I =-250A Gate-Threshold Voltage -1.0 -1.5 -2.5 V GS(th) DS GS D V =-10V, I =-8A 19 21 GS D (Note 3) R m Drain-Source On-Resistance DS(on) V =-4.5V, I =-6.8A 26 32 GS D Forward Tranconductance g V =-10V, I =-8A 12 S FS DS D (Note 4) Dynamic Characteristics C Input Capacitance 2675 iss C V =-25V,V =0V,f=1MHz pF Output Capacitance 409 oss DS GS C Reverse Transfer Capacitance 262 rss Q 78 Total Gate Charge g Q V =-15V,V =-10V,I =-8A nC Gate-Source Charge 9.8 gs DD GS D Q Gate-Drain Charge 8.3 gd t 20 Turn-On Delay Time d(on) t 23 Turn-On Rise Time r V =-15V, V =-10V, I =-1A DD GS D ns R =6,R =15 G D t 297 Turn-Off Delay Time d(off) t 147 Turn-Off Fall Time f Drain-Source Body Diode Characteristics (Note 3) V I =-2A, V =0V -1.2 V Body Diode Voltage SD SD GS Notes : 3. Pulse Test : Pulse Width300s, Duty Cycle2%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-2-12012020 2/4 MCCSEMI.COM