MCU20N06 A Features High Density Cell Design for Ultra Low R DS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD Capability N-CHANNEL Epoxy Meets UL 94 V-0 Flammability Rating MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings DPAK(TO-252) Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C J H Thermal Resistance: 100C/W Junction to Ambient C 1 O Parameter Symbol Rating Unit 2 4 F E I 3 Drain-Source Voltage V 60 V DS M K V Gate-Source Volltage V 20 V GS Q Continuous Drain Current I 20 A D A G L Pulsed Drain Current I 60 A D DM B (Note 1) E 72 Single Pulse Avalanche Energy mJ AS 1. Gate Note: 1.V =30V, L=0.5mH,R =25,Starting T =25C. DD G J 2,4. Drain 3. Source DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. G H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 S J 0.386 0.409 9.80 10.40 0.114 2.90 TYP. K L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Rev.3-2-12012020 1/4 MCCSEMI.COMMCU20N06 A Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS (Note 2) V V =V , I =250A 1 2 3 V Gate-Threshold Voltage GS(th) DS GS D (Note 2) R V =10V, I =20A m Drain-Source On-Resistance 37 45 DS(on) GS D (Note 3) Dynamic Characteristics C Input Capacitance 500 iss V =30V,V =0V,f=1MHz Output Capacitance C 60 pF DS GS oss C Reverse Transfer Capacitance 25 rss Total Gate Charge Q 12 g Q V =48V,V =10V,I =15A nC Gate-Source Charge 4.1 gs DS GS D Gate-Drain Charge Q 4.5 gd t Turn-On Delay Time 5 d(on) t Turn-On Rise Time 2.6 r V =30V, R =3, I =2A, DD G D ns V =10V GS t Turn-Off Delay Time 16.1 d(off) t Turn-Off Fall Time 2.3 f Drain-Source Body Diode Characteristics I Continuous Body Diode Current 20 S A Pulsed Diode Forward Current I 60 SM V I =20A, V =0V Body Diode Voltage 1.2 V SD S GS Note 2. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-2-12012020 2/4 MCCSEMI.COM