MCU20P10 Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C DPAK(TO-252) Storage Temperature Range: -55C to +150C (Note 1) Thermal Resistance: 1.79C/W Junction to Case J H Parameter Rating Symbol Unit C 1 O 2 4 F E Drain-Source Voltage V -100 V DS I 3 Gate-Source Volltage V 20 V GS M K V Q T =25C -20 A C I Continuous Drain Current D A T =100C -12 A C G L D B Pulsed Drain Current I -72 A DM (Note 2) Single Pulsed Avalanche Energy E 225 mJ AS 1. Gate 2,4. Drain Total Power Dissipation P 70 W D 3. Source Note: 1.Surface Mounted on FR4 Board, t 10 sec. DIMENSIONS 2. L=0.5mH, V =-50V, V =-10V,R =25,Starting T =25C. DD G G J INCHES MM DIM NOTE MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 Internal Structure B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 D E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 0.190 4.83 TYP. G H 0.236 0.244 6.00 6.20 G I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 S 0.114 2.90 TYP. K L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Rev.3-4-12012020 1/4 MCCSEMI.COMMCU20P10 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -100 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 20 A GSS DS GS I V =-100V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 3) V V =V , I =-250A -1 -1.9 -3 V Gate-Threshold Voltage GS(th) DS GS D (Note 3) R V =-10V, I =-16A 100 116 m Drain-Source On-Resistance DS(on) GS D 85 (Note 3) g V =-50V, I =-10A 5 S Forward Tranconductance FS DS D (Note 4) Dynamic Characteristics Input Capacitance C 2100 iss C V =-25V,V =0V,f=1MHz pF Output Capacitance 590 oss DS GS Reverse Transfer Capacitance C 140 rss Q Total Gate Charge 61 g V =-80V,V =-10V,I =-16A Gate-Source Charge Q 14 nC DS GS D gs Q Gate-Drain Charge 29 gd t Turn-On Delay Time 16 d(on) t Turn-On Rise Time 73 r V =-50V,I =-16A DD D ns V =-10V,R =9.1 GS GEN t Turn-Off Delay Time 34 d(off) t Turn-Off Fall Time 57 f Drain-Source Body Diode Characteristics Continuous Body Diode Current I T =25C -18 A S C V I =-10A, V =0V Body Diode Voltage -1.2 V SD S GS Reverse Recovery Time t 88.3 ns rr I =-16A,di/dt=100A/s F Q Reverse Recovery Charge 65.9 nC rr Intrinsic Turn-On Time is Negligible(Turn-On is Dominated by L +L ) Forward Turn-on Time t S D on Note 3. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-4-12012020 2/4 MCCSEMI.COM