MCU60P06 Features High Density Cell Desihn for Ultra Low R DS(on) Fully Characterized Avalanche Voltage and Current Good Stability and Uniformity with High E AS Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +175C DPAK(TO-252) Storage Temperature Range: -55C to +175C (Note 1) Thermal Resistance: 0.847C/W Junction to Case J H Parameter Rating Symbol Unit C 1 O 2 4 F E Drain-Source Voltage V -60 V DS I 3 Gate-Source Volltage V 20 V GS M K V Q T =25C -60 A C I Continuous Drain Current D A T =100C -42.3 A C G L D B Pulsed Drain Current I -260 A DM (Note 2) E 722 Single Pulse Avalanche Energy mJ AS 1. Gate 2,4. Drain Total Power Dissipation P 177 W D 3. Source Note: 1.Surface Mounted on FR4 Board, t 10 sec. DIMENSIONS 2.T =25C,V =-30V,V =-10V,L=0.5mH,R =25. J DD G g INCHES MM DIM NOTE MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 Internal Structure E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 0.190 4.83 TYP. G D H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 0.114 2.90 TYP. K L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. G O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. S Rev.3-3-02012021 1/5 MCCSEMI.COMMCU60P06 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =-60V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 3) V V =V , I =-250A -2 -2.6 -3.5 V Gate-Threshold Voltage GS(th) DS GS D (Note 3) R V =-10V, I =-20A 13 18 m Drain-Source On-Resistance DS(on) GS D (Note 3) g V =-5V, I =-20A 25 S Forward Tranconductance FS DS D (Note 4) Dynamic Characteristics Input Capacitance C 5814 iss C V =-25V,V =0V,f=1MHz pF Output Capacitance 483 oss DS GS Reverse Transfer Capacitance C 234 rss Q Total Gate Charge 75 g V =-30V,V =-10V,I =-20A Gate-Source Charge Q 16 DS GS D gs nC Q Gate-Drain Charge 19 gd Q Reverse Recovery Chrage 71 rr I =-20A, di/dt=-100A/s S t Reverse Recovery Time 49 rr t Turn-On Delay Time 18 d(on) t Turn-On Rise Time 20 ns r V =-30V, R =1.5, DD L V =-10V,R =3 GS G t Turn-Off Delay Time 55 d(off) Turn-Off Fall Time t 35 f Drain-Source Body Diode Characteristics Continuous Body Diode Current I T =25C -60 A S C V I =-20A, V =0V Body Diode Voltage -1.2 V SD SD GS Note 3. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-02012021 2/5 MCCSEMI.COM