MCU80N03A Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low R DS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +175C DPAK(TO-252) Storage Temperature Range: -55C to +175C (Note 1) Thermal Resistance: 3.3C/W Junction to Case J H Parameter Rating Symbol Unit C 1 O 2 4 F E Drain-Source Voltage V 30 V DS I 3 Gate-Source Volltage V 20 V GS M K V Q T =25C 80 A C I Continuous Drain Current D A T =100C 56 A C G L (Note 2) D B I 190 A Pulsed Drain Current DM (Note 3) E 230 Single Pulse Avalanche Energy mJ AS 1. Gate 2,4. Drain T =25C 45 W C P Total Power Dissipation 3. Source D T =100C 22.5 W C DIMENSIONS Note: INCHES MM DIM NOTE MIN MAX MIN MAX 1.R is the Sum of the Junction-to-Case and Case-to-Ambient Thermal Resistance, JA A 0.087 0.094 2.20 2.40 Where the Case Thermal Reference is Defined as the Solder Mounting Surface of the B 0.000 0.005 0.00 0.13 Drain Pins. R is Guaranteed by Design, While R is Determined by the Board Design. JC JA 2 C 0.026 0.034 0.66 0.86 The Maximum Rating Presented Here is Based on Mounting on a 1 in Pad of 2oz Copper. D 0.018 0.023 0.46 0.58 2.Pulse Test: Pulse Width300s,Duty Cycle 2%. E 0.256 0.264 6.50 6.70 3.T =25C, V =30V, V =25V, V =10V, L=1mH. J DS DD GS F 0.201 0.215 5.10 5.46 0.190 4.83 TYP. G H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 Internal Structure J 0.386 0.409 9.80 10.40 0.114 2.90 TYP. K D L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. G S Rev.3-2-12012020 1/4 MCCSEMI.COMMCU80N03A Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 30 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =30V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =250A 1 1.5 2.5 V GS(th) DS GS D V =10V, I =20A 4.2 5.5 GS D R Drain-Source On-Resistance m DS(on) V =4.5V, I =15A 5.7 8 GS D V V =0V, I =20A V Diode Forward Voltage 1.2 SD GS S Continuous Body Diode Current I 80 A S Dynamic Characteristics Input Capacitance C 2150 iss C V =15V,V =0V,f=1MHz pF Output Capacitance 435 oss DS GS Reverse Transfer Capacitance C 252 rss Q Total Gate Charge 52.8 g V =15V,V =10V,I =20A Q nC Gate-Source Charge DS GS D 12.3 gs Q Gate-Drain Charge 10.8 gd t Turn-On Delay Time 9 d(on) t Turn-On Rise Time 15.5 r V =10V,V =20V, I =2A,R =1 GS DD D L ns R =3 GEN t Turn-Off Delay Time 29 d(off) Turn-Off Fall Time t 9 f t Reverse Recovery Time 27 ns RR I =20A, di/dt=100A/s F Reverse Recovery Charge Q 28 nC RR Rev.3-2-12012020 2/4 MCCSEMI.COM