MSJP11N65 Features Very Low FOM R Q DS(on) g Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Super-Junction Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Power MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 62C/W Junction to Ambient TO-220AB(H) Thermal Resistance: 1.6C/W Junction to Case A Parameter Rating Symbol Unit E B G Drain-Source Voltage V 650 V DS C Gate-Source Volltage V 30 V P GS D I S Continuous Drain Current 11 A D F (Note 2) I 33 1 2 3 A Pulsed Drain Current DM R H (Note 3) J E 211 mJ Single Pulse Avalanche Energy AS K (Note 2) I 1.6 A Avalanche Current AR L O (Note 2) E 0.32 mJ Repetitive Avalanche Energy AR Total Power Dissipation T =25C P 78 W C D N Q M Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Repetitive Rating , Pulse Width Limited by Maximum Junction Temperature. DIMENSIONS 3. I =1.6A, V =50V, R =25, Starting T =25C . INCHES MM AS DD G J DIM NOTE MIN MAX MIN MAX A 0.172 0.188 4.37 4.77 B 0.049 0.057 1.25 1.45 Internal Structure C 0.246 0.270 6.25 6.85 D 0.594 0.634 15.10 16.10 E 0.382 0.406 9.70 10.30 D F 0.346 0.370 8.80 9.40 G 0.102 0.118 2.60 3.00 H 0.087 0.102 2.20 2.60 J ----- 0.134 ----- 3.40 1. Gate G K 0.046 0.058 1.17 1.47 2. Drain L 0.028 0.037 0.70 0.95 3. Source M 0.200 5.08 TYP. S 0.100 2.54 N TYP. O 0.502 0.543 12.75 13.80 P 0.134 0.150 3.40 3.80 Q 0.016 0.026 0.40 0.65 R 0.276 ----- 7.00 ----- S 0.217 ----- 5.50 ----- Rev.3-3-12012020 1/4 MCCSEMI.COMMSJP11N65 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 650 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =30V 100 nA GSS DS GS V =650V, V =0V 1 DS GS Zero Gate Voltage Drain Current I A DSS V =650V, V =0V, T =150C 100 DS GS J V V =V , I =250A Gate-Threshold Voltage 2.5 4 V GS(th) DS GS D (Note 4) R V =10V, I =5.5A 0.34 0.38 DS(on) Drain-Source On-Resistance GS D (Note 4) g V =10V, I =5.5A 7.8 S FS DS D Forward tranconductance (Note 5) Dynamic Characteristics C Input Capacitance 901 iss V =50V,V =0V,f=1MHz Output Capacitance C 50 pF DS GS oss C Reverse Transfer Capacitance 5.5 rss Total Gate Charge Q 21 g Q V =520V,V =10V,I =11A Gate-Source Charge 4.5 nC gs DD GS D Q Gate-Drain Charge 7 gd t Turn-On Delay Time 41 d(on) t Turn-On Rise Time 20 r V =400V, I =11A,R =25 ns DD D G t Turn-Off Delay Time 123 d(off) t Turn-Off Fall Time 6.4 f Drain-Source Body Diode Characteristics I Continuous Body Diode Current 9.2 S T =25C A C Pulsed Diode Forward Current I 29 SM V I =11A, V =0V Body Diode Voltage 0.9 1.2 V SD SD GS Reverse Recovery Time t 280 ns rr Q V =520V, I =I ,di /dt=100A/s Reverse Recovery Charge 2.8 C rr R F S F Peak Reverse Recovery Current I 17 A rrm Note 4. Pulse Test : Pulse Width 300s, Duty Cycle 1%. 5. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM