MSJPF11N65 Features Very Low FOM R Q DS(on) g Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix-H Super-Junction Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Power MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 80C/W Junction to Ambient TO-220F Thermal Resistance: 4C/W Junction to Case A M Parameter Rating Symbol Unit N Drain-Source Voltage V 650 V DS C Gate-Source Volltage V 30 V GS D I Continuous Drain Current 11 A D (Note 1) I 33 Pulsed Drain Current A DM 12 3 (Note 2) E 211 mJ Single Pulse Avalanche Energy AS F (Note 1) I 1.6 Avalanche Current A P AR J (Note 1) E E 0.32 mJ Repetitive Avalanche Energy AR Total Power Dissipation T =25C P 31.3 W C D H Q Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature. G 2. I =1.6A, V =50V, R =25, Starting T =25C . AS DD G J DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX A 0.392 0.421 9.96 10.70 D B 0.138 3.50 0.106 2.70 TYP. C D 0.567 0.642 14.40 16.30 1. Gate E 0.520 13.20 TYP. G 2. Drain F --- 0.177 --- 4.50 G 0.100 2.54 TYP. 3. Source S H 0.020 0.035 0.50 0.90 J 0.043 0.053 1.10 1.35 M 0.169 0.201 4.30 5.10 N --- 0.140 --- 3.56 P 0.083 0.126 2.10 3.20 Q 0.020 0.032 0.50 0.80 Rev.3-7-12012020 1/5 MCCSEMI.COM BMSJPF11N65 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 650 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =30V 100 nA GSS DS GS V =650V, V =0V 1 DS GS Zero Gate Voltage Drain Current I A DSS V =650V, V =0V, T =150C 100 DS GS J V V =V , I =250A Gate-Threshold Voltage 2.5 4 V GS(th) DS GS D (Note 3) R V =10V, I =5.5A 0.34 0.38 Drain-Source On-Resistance DS(on) GS D (Note 3) g V =10V, I =5.5A 7.8 S Forward tranconductance FS DS D (Note 4) Dynamic Characteristics C Input Capacitance 901 iss V =50V,V =0V,f=1MHz Output Capacitance C 50 pF DS GS oss C Reverse Transfer Capacitance 5.5 rss Total Gate Charge Q 21 g Q V =520V,V =10V,I =11A Gate-Source Charge 4.5 nC gs DD GS D Q Gate-Drain Charge 7 gd t Turn-On Delay Time 41 d(on) t Turn-On Rise Time 20 r V =400V, I =11A,R =25 ns DD D G t Turn-Off Delay Time 123 d(off) t Turn-Off Fall Time 6.4 f Drain-Source Body Diode Characteristics I Continuous Body Diode Current 9.2 S T =25C A C Pulsed Diode Forward Current I 29 SM V I =11A, V =0V Body Diode Voltage 0.9 1.2 V SD SD GS Reverse Recovery Time t 280 ns rr Q V =520V, I =I ,di /dt=100A/s Reverse Recovery Charge 2.8 C rr R F S F Peak Reverse Recovery Current I 17 A rrm Note 3. Pulse Test : Pulse Width 300s, Duty Cycle 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-7-12012020 2/5 MCCSEMI.COM