SI5618 Features Advanced Trench Cell Design Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 150C/W Junction to Ambient SOT-23 Parameter Rating Symbol Unit A Drain-Source Voltage V -60 V DS D 3 Gate-Source Volltage V 20 V GS B C T =25C -1.9 A Continuous Drain A I D (Note 2) 1 2 Current T =100C -1.2 A A F E (Note 3) I -7.6 A Pulsed Drain Current DM Total Power Dissipation P 0.83 W D G H J L Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2 2. Surface Mounted on 1 in Pad Area, t10 sec. DIMENSIONS 3. Pulse Test: Pulse Width300s,Duty Cycle 2%. INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.090 0.104 2.30 2.64 C 0.047 0.055 1.20 1.40 Internal Structure D 0.034 0.041 0.85 1.05 D E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.10 0.0004 0.004 H 0.035 0.040 0.90 1.02 1. GATE J 0.003 0.007 0.08 0.18 2. SOURCE K 0.012 0.020 0.30 0.51 3. DRAIN G L 0.020 0.50 0.00 7 0.20 Suggested Solder Pad Layout Marking: 5618 S 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-5- 04032021 1/4 MCCSEMI.COMSI5618 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =-48V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 3) V V =V , I =-250A -1 -2 -3 V Gate-Threshold Voltage GS(th) DS GS D V =-10V, I =-1.5A 125 150 GS D (Note 3) R m Drain-Source On-Resistance DS(on) V =-4.5V, I =-1A 165 200 GS D (Note 3) V V =0V, I =-1A V -0.8 -1.4 SD GS S Diode Forward Voltage Continuous Body Diode Current I -1.9 A S Dynamic Characteristics Input Capacitance C 580 iss C V =-15V,V =0V,f=1MHz pF Output Capacitance 52 oss DS GS Reverse Transfer Capacitance C 35 rss Q Total Gate Charge 9.5 g V =-20V,V =-10V,I =-1.5A Q nC Gate-Source Charge DS GS D 1.52 gs Q Gate-Drain Charge 1.76 gd t Turn-On Delay Time 17.4 d(on) V =-15V, V =-10V, DS GEN t Turn-On Rise Time 5.4 r R =3.3, R =15, G L ns I =-1A DS t Turn-Off Delay Time 37.2 d(off) Turn-Off Fall Time t 2.4 f Rev.3-5- 04032021 2/4 MCCSEMI.COM