EDB1316BDBH-1DAAT-F-D Micron

1Gb: x16, x32 Automotive LPDDR2 SDRAM Features Automotive LPDDR2 SDRAM EDB1332BD, EDB1316BD, EDB2432B4 Options Marking Features Density/Page Size Ultra low-voltage core and I/O power supplies 1Gb/2KB - single die 13 V = 1.141.30V DD2 2Gb/2KB - dual die 24 V /V = 1.141.30V DDCA DDQ Organization V = 1.701.95V DD1 x16 16 Clock frequency range x32 32 53310 MHz (data rate range: 106620 Mb/s/pin) V : 1.2V B DD2 Four-bit prefetch DDR architecture Revision Eight internal banks for concurrent operation Single die D Multiplexed, double data rate, command/address Multi-die 4 inputs commands entered on every CK edge FBGA green package Bidirectional/differential data strobe per byte of 134-ball FBGA BH data (DQS/DQS ) 134-ball multi-die FBGA MA Programmable READ and WRITE latencies (RL/WL) Timing cycle time Programmable burst lengths: 4, 8, or 16 1.875ns RL = 8 -1D Per-bank refresh for concurrent operation Special options On-chip temperature sensor to control self refresh Automotive grade (Package-level A rate (SR not supported >105C) burn-in) Partial-array self refresh (PASR) 1 Operating temperature range Deep power-down mode (DPD) From 40C to +85C IT Selectable output drive strength (DS) From 40C to +105C AT Clock stop capability 2 From 40C to +125C UT RoHS-compliant, green packaging 1. When T >105C, self-refresh mode is not Notes: C available. Table 1: Key Timing Parameters 2. UT option use based on automotive usage model. Please contact Micron sales repre- Speed Clock Rate Data Rate sentative with questions. t t Grade (MHz) (Mb/s/pin) RL WL RCD/ RP -1D 533 1066 8 4 Typical Table 2: S4 Configuration Addressing Architecture 64 Meg x 16 32 Meg x 32 64 Meg x 32 Die configuration 8 Meg x 16 x 8 banks 4 Meg x 32 x 8 banks 2 x 8 Meg x 16 x 8 banks Row addressing 8K (A 12:0 ) 8K (A 12:0 ) 8K (A 12:0 ) Column addressing 1K (A 9:0 ) 512 (A 8:0 ) 1K (A 9:0 ) Number of die 1 1 2 Die per rank 1 1 2 1 Ranks per channel 111 1. A channel is a complete LPDRAM interface, including command/address and data pins. Note: 09005aef86530ccb Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 u98m lpddr2 auto at ut.pdf - Rev. H 07/17 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x16, x32 Automotive LPDDR2 SDRAM Features Figure 1: LPDDR2 Part Numbering E D B 13 32 B 4 BH -1D A AT -F Embedded Memory Environment Code -F = Lead free (RoHS compliant) and halogen free Type D = Packaged device Operating Temperature IT = 40C to +85C Product Family AT = 40C to +105C B = DDR2 Mobile RAM UT = 40C to +125C Density Special Options 13 = 1Gb/2KB A = Automotive grade 24 = 2Gb/2KB Speed (package only) Organization -1D = 1066 Mbps 16 = x16 32 = x32 64 = x64 Package BH = 134-ball VFBGA (10mm x 11.5mm) MA = 134-ball VFBGA (10mm x 11.5mm) Power Supply and Interface B = V = 1.8V V = V = 1.2V DD1 DD2 DDQ Revision S4B device HSUL D (for single-die) 4 (for multi-die) FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. Table 3: Package Codes and Descriptions Package Die per Solder Ball Code Ball Count Ranks Channels Size (mm) Package Composition BH 134 1 1 10 x 11.5 x 1.0, 0.65 pitch SDP SAC302 MA 134 1 1 10 x 11.5 x 1.0, 0.65 pitch DDP SAC302 1. SDP = single-die package DDP = Dual-die package Notes: 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 09005aef86530ccb Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 u98m lpddr2 auto at ut.pdf - Rev. H 07/17 EN 2015 Micron Technology, Inc. All rights reserved.