M28W320FCT M28W320FCB 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Features Supply Voltage FBGA V = 2.7V to 3.6V Core Power Supply DD V = 1.65V to 3.6V for Input/Output DDQ V = 12V for fast Program (optional) TFBGA47 (ZB) PP 6.39 x 6.37mm Access Time: 70, 80, 90, 100ns Programming Time 10s typical Double Word Programming Option Quadruple Word Programming Option Common Flash Interface Memory Blocks TSOP48 (N) Parameter Blocks (Top or Bottom location) 12 x 20mm Main Blocks Block Locking All blocks locked at Power Up Any combination of blocks can be locked WP for Block Lock-Down Security 128 bit user Programmable OTP cells 64 bit unique device identifier Automatic Stand-by mode Program and Erase Suspend 100,000 Program/Erase cycles per block Electronic Signature Manufacturer Code: 20h Top Device Code, M28W320FCT: 88BAh Bottom Device Code, M28W320FCB: 88BBh RoHS compliant packages November 2008 208010-05 1/69 www.numonyx.com 1Contents M28W320FCT, M28W320FCB Contents 1 Summary description 7 2 Signal descriptions . 12 2.1 Address inputs (A0-A20) . 12 2.2 Data input/output (DQ0-DQ15) . 12 2.3 Chip Enable (E) 12 2.4 Output Enable (G) 12 2.5 Write Enable (W) . 12 2.6 Write Protect (WP) 12 2.7 Reset (RP) 13 2.8 V supply voltage 13 DD 2.9 V supply voltage . 13 DDQ 2.10 V Program supply voltage 13 PP 2.11 V ground 13 SS 3 Bus operations 14 3.1 Read . 14 3.2 Write . 14 3.3 Output Disable . 14 3.4 Standby 14 3.5 Automatic Standby 15 3.6 Reset 15 4 Command interface . 16 4.1 Read Memory Array command 16 4.2 Read Status Register command 16 4.3 Read Electronic Signature command 17 4.4 Read CFI Query command . 17 4.5 Block Erase command . 18 4.6 Program command 18 4.7 Double Word Program command . 19 4.8 Quadruple Word Program command 19 2/69