128Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW128G Common flash interface Features 64-bit security code Supply voltage 100,000 program/erase cycles per block V = 2.73.6V (program, erase, read) CC Low power consumption V = 1.653.6V (I/O buffers) CCQ Standby and automatic standby V = 9V for fast program (optional) PPH Hardware block protection Asynchronous random/page read V /WP pin for fast program and write protect PP Page size: 8words of the four outermost parameter blocks Page access: 25ns Security features Random access: 60ns, 70ns, 80ns Volatile protection Enhanced buffered program commands: 256-word Nonvolatile protection Program time Password protection 15s per byte/word TYP Additional block protection 32-word write buffer Extra block (128-word factory locked and 128-word Chip program time: 5s with V and 8s without PPH customer lockable) for security block or additional V PPH information storage Erase verify 128-word (256-byte) memory block for perma- Memory organization nent, secure identification Quadruple bank memory array: 16Mb + 48Mb + Electronic signature 48Mb + 16Mb Manufacturer code: 0020h Parameter blocks (top and bottom) Device code: 227Eh+2220h+2202h Dual operation (while program or erase in one RoHS-compliant packages bank, read from any other bank) TSOP56 (NF) 14mm x 20mm Program/erase suspend and resume modes TBGA64 (ZA) 10mm x 13mm Read from any block during program suspend Read and program another block during erase suspend Unlock bypass, block erase, chip erase, write to buf- fer, enhanced buffered program commands Fast buffered/batch programming Fast block/chip erase PDF: 09005aef8507150c Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29dw 128g.pdf - Rev. B 02/16 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica- tion comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Device Type M29 Architecture D = Dual operation Operating Voltage W = V = 2.7 to 3.6V CC Device function 128G = 128Mb (x16) page, dual boot Speed 70 = 70ns (80ns if V = 1.65V to V ) CCQ CC 60 = 60ns (80ns if V = 1.65V to V ) CCQ CC Package NF = 56-pin TSOP, 14mm x 20mm ZA = 64-pin TBGA, 10mm x 13mm, 1mm pitch Temperature Range 6 = 40C to +85C Shipping Options E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing PDF: 09005aef8507150c Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29dw 128g.pdf - Rev. B 02/16 EN 2012 Micron Technology, Inc. All rights reserved.