X-On Electronics has gained recognition as a prominent supplier of M29DW323DT70ZE6E NOR Flash across the USA, India, Europe, Australia, and various other global locations. M29DW323DT70ZE6E NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

M29DW323DT70ZE6E Micron

M29DW323DT70ZE6E electronic component of Micron
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Part No.M29DW323DT70ZE6E
Manufacturer: Micron
Category: NOR Flash
Description: Flash Memory STD FLASH 32 MEG
Datasheet: M29DW323DT70ZE6E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.4445 ea
Line Total: USD 3.44 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.4445
10 : USD 3.0549
100 : USD 2.973
250 : USD 2.7956
500 : USD 2.5594
2000 : USD 2.5358

   
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We are delighted to provide the M29DW323DT70ZE6E from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M29DW323DT70ZE6E and other electronic components in the NOR Flash category and beyond.

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase and DD Read V = V = 2.4V to 3.6V for I/O Buffers DDQ DDQIN V = 12V for fast Program (optional) PP HIGH PERFORMANCE Access Time: 80, 90 and 100ns PQFP80 (T) 56MHz Effective Zero Wait-State Burst Read Synchronous Burst Reads Asynchronous Page Reads HARDWARE BLOCK PROTECTION BGA WP pin Lock Program and Erase SOFTWARE BLOCK PROTECTION Tuning Protection to Lock Program and LBGA80 (ZA) Erase with 64 bit User Programmable Pass- 10 x 8 ball array word (M58BW016B version only) OPTIMIZED for FDI DRIVERS Fast Program / Erase suspend latency time < 6s Common Flash Interface MEMORY BLOCKS 8 Parameters Blocks (Top or Bottom) 31 Main Blocks LOW POWER CONSUMPTION 5A Typical Deep Power Down 60A Typical Standby Automatic Standby after Asynchronous Read ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code M58BW016xT: 8836h Bottom Device Code M58BW016xB: 8835h May 2003 1/63M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB TABLE OF CONTENTS SUMMARY DESCRIPTION . 6 Figure 2. Logic Diagram . 7 Table 1. Signal Names 7 Figure 3. LBGA Connections (Top view through package) . 8 Figure 4. PQFP Connections (Top view through package) . 9 Block Protection 10 Tuning Block Protection 10 Table 2. Top Boot Block Addresses, M58BW016BT, M58BW016DT 11 Table 3. Bottom Boot Block Addresses, M58BW016BB, M58BW016DB . 12 SIGNAL DESCRIPTIONS . 13 Address Inputs (A0-A18) . 13 Data Inputs/Outputs (DQ0-DQ31) 13 Chip Enable (E) 13 Output Enable (G) 13 Output Disable (GD) . 13 Write Enable (W) . 13 Reset/Power-Down (RP) . 13 Latch Enable (L) 13 Burst Clock (K) . 14 Burst Address Advance (B) . 14 Valid Data Ready (R) 14 Write Protect (WP) 14 Supply Voltage (V 14 DD) Output Supply Voltage (V ) . 14 DDQ Input Supply Voltage (V ) 14 DDQIN Program/Erase Supply Voltage (V ). . 14 PP Ground (V and V ) 14 SS SSQ BUS OPERATIONS 15 Asynchronous Bus Operations 15 Asynchronous Bus Read . 15 Asynchronous Latch Controlled Bus Read . 15 Asynchronous Page Read 15 Asynchronous Bus Write . 15 Asynchronous Latch Controlled Bus Write . 15 Output Disable . 16 Standby 16 Automatic Low Power. . 16 Power-Down. 16 Electronic Signature . 16 Table 4. Asynchronous Bus Operations 16 Table 5. Asynchronous Read Electronic Signature Operation . 17 2/63

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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