M28W160ECT70ZB6E Micron

M28W160ECT M28W160ECB 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V Core Power Supply DD V = 1.65V to 3.6V for Input/Output DDQ V = 12V for fast Program (optional) PP FBGA ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME: 10s typical TFBGA46 (ZB) Double Word Programming Option 6.39 x 6.37mm COMMON FLASH INTERFACE 64 bit Security Code MEMORY BLOCKS Parameter Blocks (Top or Bottom location) Main Blocks BLOCK LOCKING All blocks locked at Power Up TSOP48 (N) Any combination of blocks can be locked 12 x 20mm WP for Block Lock-Down SECURITY 64 bit user Programmable OTP cells 64 bit unique device identifier One Parameter Block Permanently Lockable AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M28W160ECT: 88CEh Bottom Device Code, M28W160ECB: 88CFh ECOPACK PACKAGES AVAILABLE March 2008 1/50M28W160ECT, M28W160ECB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 6 Table 1. Signal Names 6 Figure 3. TSOP Connections 6 Figure 4. TFBGA Connections (Top view through package) 7 Figure 5. Block Addresses 7 Figure 6. Security Block and Protection Register Memory Map 8 SIGNAL DESCRIPTIONS 9 Address Inputs (A0-A19) 9 Data Input/Output (DQ0-DQ15) . 9 Chip Enable (E) . 9 Output Enable (G) . 9 Write Enable (W) 9 Write Protect (WP) . 9 Reset (RP) . 9 V Supply Voltage 9 DD V Supply Voltage . 9 DDQ V Program Supply Voltage 9 PP V Ground 9 SS BUS OPERATIONS 10 Read . 10 Write . 10 Output Disable . 10 Standby 10 Automatic Standby 10 Reset 10 Table 2. Bus Operations 10 COMMAND INTERFACE . 11 Read Memory Array Command 11 Read Status Register Command . 11 Read Electronic Signature Command . 11 Read CFI Query Command 11 Block Erase Command . 11 Program Command 11 Double Word Program Command 12 Clear Status Register Command . 12 Program/Erase Suspend Command 12 2/50