M28W640HCB70N6E Micron

M28W640HCT M28W640HCB 64 Mbit (4 Mb x 16, boot block) 3 V supply Flash memory Features Supply voltage V = 2.7 V to 3.6 V DD FBGA V = 12 V for fast program (optional) PP Access times: 70 ns Asynchronous Page Read mode TFBGA48 (ZB) Page width: 4 words 6.39 x 10.5 mm Page access: 25 ns Random access: 70 ns Programming time: 10 s typical Double Word Programming option Quadruple Word Programming option TSOP48 (N) Common Flash interface 12 x 20 mm Memory blocks Parameter blocks (top or bottom location) Packages Main blocks RoHS compliant Block locking All blocks locked at power-up Any combination of blocks can be locked WP for block lock-down Security 128 bit user programmable OTP cells 64 bit unique device identifier Automatic standby mode Program and Erase Suspend 100,000 program/erase cycles per block Electronic signature Manufacturer code: 20h Top device code, M28W640HCT: 8848h Bottom device code, M28W640HCB: 8849h November 2008 Rev 3 1/72 www.numonyx.com 1Contents M28W640HCT, M28W640HCB Contents 1 Description . 7 2 Signal descriptions . 12 2.1 Address inputs (A0-A21) . 12 2.2 Data input/output (DQ0-DQ15) . 12 2.3 Chip Enable (E) 12 2.4 Output Enable (G) 12 2.5 Write Enable (W) . 12 2.6 Write Protect (WP) 12 2.7 Reset (RP) 13 2.8 V supply voltage 13 DD 2.9 V program supply voltage . 13 PP 2.10 V ground 13 SS 3 Bus operations 14 3.1 Read . 14 3.2 Write . 14 3.3 Output Disable . 14 3.4 Standby 14 3.5 Automatic Standby 15 3.6 Reset 15 4 Command interface . 16 4.1 Read Memory Array command 16 4.2 Read Status Register command 16 4.3 Read Electronic Signature command 16 4.4 Read CFI Query command . 17 4.5 Block Erase command . 17 4.6 Program command 18 4.7 Double Word Program command . 18 4.8 Quadruple Word Program command 19 4.9 Clear Status Register command 19 2/72