512Mb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 64KB, Sector Erase
MT25QL512AB
Options Marking
Features
Voltage
SPI-compatible serial bus interface
2.73.6V L
Single and double transfer rate (STR/DTR)
Density
Clock frequency
512Mb 512
133 MHz (MAX) for all protocols in STR
Device stacking
66 MHz (MAX) for all protocols in DTR
Monolithic A
Dual/quad I/O commands for increased through-
Lithography
put up to 65 MB/s
45nm B
Supported protocols in both STR and DTR
Die revision A
Extended I/O protocol
Pin configuration
Dual I/O protocol
RESET and HOLD# 8
Quad I/O protocol
Production status
Execute-in-place (XIP)
Engineering samples ES
PROGRAM/ERASE SUSPEND operations
Operating temperature range
Volatile and nonvolatile configuration settings
From 40C to +85C IT
Software reset
From 40C to +105C AT
Additional reset pin for selected part numbers
Special options
3-byte and 4-byte address modes enable memory
Standard S
access beyond 128Mb
Automotive A
Dedicated 64-byte OTP area outside main memory
Standard security 0
Readable and user-lockable
Packages JEDEC-standard, RoHS-
Permanent lock with PROGRAM OTP command
compliant
Erase capability
16-pin SOP2, 300 mils SF
Bulk erase
(SO16W, SO16-Wide, SOIC-16)
Sector erase 64KB uniform granularity
24-ball T-PBGA 05/6mm x 8mm 12
Subsector erase 4KB, 32KB granularity
(TBGA24)
Security and write protection
Sector Size
Volatile and nonvolatile locking and software
64KB E
write protection for each 64KB sector
Nonvolatile configuration locking
Password protection
Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
Program/erase protection during power-up
CRC detects accidental changes to raw data
Electronic signature
JEDEC-standard 3-byte signature (BA20h)
Extended device ID: two additional bytes identify
device factory options
JESD47H-compliant
Minimum 100,000 ERASE cycles per sector
Data retention: 20 years (TYP)
PDF: 09005aef84fe19ac Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
qlks_512mb_3V_45nm.pdf - Rev. C 12/13 EN 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.512Mb, 3V Multiple I/O Serial Flash Memory
Features
Part Number Ordering
Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers
by using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Ordering Information
MT 25Q L xxx A BA 1 E SF - 0 S IT ES
Micron Technology Production Status
Blank = Production
Part Family
ES = Engineering samples
25Q = SPI NOR
QS = Qualification samples
Voltage
L = 2.73.6V
Operating Temperature
U = 1.72.0V IT = 40C to +85C
AT = 40C to +105C (Grade 2 AEC-Q100)
Density
064 = 64Mb (8MB)
Special Options
128 = 128Mb (16MB)
S = Standard
256 = 256Mb (32MB)
A = Automotive quality
512 = 512Mb (64MB)
01G = 1Gb (128MB)
Security Features
02G = 2Gb (256MB)
0 = Standard default security
Stack Package Codes
A = 1 die/1 S# 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array)
14 = 24-ball T-PBGA, 05/6 x 8mm (6 x 4 array)
B = 2 die/1 S#
SC = 8-pin SOP2, 150 mil
C = 4 die/1 S#
SE = 8-pin SOP2, 208 mil
Litho SF = 16-pin SOP2, 300 mil
W7 = 8-pin W-PDFN, 6 x 5 mm sawn
B = 45nm
W8 = 8-pin W-PDFN, 8 x 6mm sawn
W9 = 8-pin W-PDFN, 8 x 6mm sawn
Die Revision
A = Rev. A
Sector size
Pin Configuration Option
E = 64KB
1 = HOLD# pin
3 = RESET# pin
8 = RESET# & HOLD# pin
PDF: 09005aef84fe19ac Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
qlks_512mb_3V_45nm.pdf - Rev. C 12/13 EN 2013 Micron Technology, Inc. All rights reserved.