256Mb, Twin-Quad I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Twin-Quad I/O, 4KB, 32KB, 64KB, Sector Erase
MT25TL256
Options Marking
Features
Voltage
Stacked device (two 128Mb die)
2.73.6V L
SPI-compatible serial bus interface
Density
Single and double transfer rate (STR/DTR)
256Mb 256
Clock frequency
Device stacking
133 MHz (MAX) for all protocols in STR
B = 2 die and 1 S# pin B
90 MHz (MAX) for all protocols in DTR
H = 2 die and 2 S# pins H
Dual/quad I/O instruction provides increased
Device generation B
throughput up to 90 MB/s for each die correspond-
Die revision A
ing to 180 MB/s for the twin-quad device
Pin configuration
Supported protocols: Extended, Dual and Quad I/O
RESET# and HOLD# 8
both STR and DTR
Sector Size
Execute-in-place (XIP)
64KB E
PROGRAM/ERASE SUSPEND operations
Packages JEDEC-standard, RoHS-
Volatile and nonvolatile configuration settings
compliant
Software reset
16-pin SOP2, 300 mils body width SF
Additional reset pin for selected part numbers
(SO16W)
Dedicated 64-byte OTP area outside main memory
24-ball T-PBGA, 05/6mm x 8mm 12
Readable and user-lockable
(TBGA24)
Permanent lock with PROGRAM OTP command
Security Features
Erase capability
Standard 0
Die erase
Special options
Sector erase 64KB uniform granularity
Automotive A
Subsector erase 4KB, 32KB granularity
Operating temperature range
Erase performance: 400KB/sec (64KB sector)
From 40C to +105C AT
Erase performance: 80KB/sec (4KB sub-sector)
Program performance: 2MB/sec
Security and write protection
Volatile and nonvolatile locking and software
write protection for each 64KB sector
Nonvolatile configuration locking
Password protection
Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
Program/erase protection during power-up
CRC detects accidental changes to raw data
Electronic signature
JEDEC-standard 3-byte signature (BA18h)
Extended device ID: two additional bytes identify
device factory options
JESD47H-compliant
Minimum 100,000 ERASE cycles per sector
Data retention: 20 years (TYP)
PDF: CCMTD-1725822587-3569 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
mt25t-qlhs-L256-xBA-xxT.pdf - Rev. H 07/18 EN 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.256Mb, Twin-Quad I/O Serial Flash Memory
Features
Part Number Ordering
Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers
by using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Ordering Information
MT 25T L xxx B BA 1 E SF - 0 A AT ES
Micron Technology Production Status
Blank = Production
Part Family ES = Engineering samples
25T = Twin Quad Serial NOR Flash QS = Qualification samples
Voltage Operating Temperature
L = 2.73.6V
AT = 40C to +105C
Density Special Options
A = Automotive grade AEC-Q100
256 = 256Mb (32MB)
512 = 512Mb (64MB)
01G = 1Gb (128GB)
Security Features
Stack 0 = Standard default security
B = 2 die/1 S#
H = 2 die/2 S# Package Codes
12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array)
Device Generation SF = 16-pin SOP2, 300 mil
A = 1st generation
B = 2nd generation Sector size
E = 64KB sectors, 4KB and 32KB sub-sectors
Die Revision
A = Rev. A Pin Configuration Option
B = Rev. B 1 = HOLD# pin
3 = RESET# pin
8 = RESET# and HOLD# pins
PDF: CCMTD-1725822587-3569 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
mt25t-qlhs-L256-xBA-xxT.pdf - Rev. H 07/18 EN 2014 Micron Technology, Inc. All rights reserved.