1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR
Features
Parallel NOR Flash Embedded Memory
MT28EW01GABA
BLANK CHECK operation to verify an erased block
Features
CYCLIC REDUNDANCY CHECK (CRC) operation to
Single-level cell (SLC) process technology
verify a program pattern
Density: 1Gb
V /WP# protection
PP
Supply voltage
Protects first or last block regardless of block
V = 2.73.6V (program, erase, read)
CC protection settings
V = 1.65 - V (I/O buffers)
CCQ CC Software protection
Asynchronous random/page read
Volatile protection
Page size: 16 words or 32 bytes
Nonvolatile protection
Page access: 20ns
Password protection
Random access: 95ns (V = V = 2.7-3.6V)
CC CCQ Extended memory block
Random access: 100ns (V = 1.65-V )
CCQ CC 128-word (256-byte) block for permanent, secure
Buffer program (512-word program buffer)
identification
2.0 MB/s (TYP) when using full buffer program
Programmed or locked at the factory or by the
2.5 MB/s (TYP) when using accelerated buffer
customer
program (V )
HH JESD47-compliant
Word/Byte program: 25us per word (TYP)
100,000 (minimum) ERASE cycles per block
Block erase (128KB): 0.2s (TYP)
Data retention: 20 years (TYP)
Memory organization
Package
Uniform blocks: 128KB or 64KW each
56-pin TSOP, 14 x 20mm (JS)
x8/x16 data bus
64-ball LBGA, 11 x 13mm (PC)
Program/erase suspend and resume capability
RoHS-compliant, halogen-free packaging
Read from another block during a PROGRAM
Operating temperature
SUSPEND operation
Ambient: 40C to +85C
Read or program another block during an ERASE
SUSPEND operation
Unlock bypass, block erase, chip erase, and write to
buffer capability
PDF: 09005aef8587f25a Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
mt28ew_1gb.pdf - Rev. F 05/18 EN 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR
Features
Part Numbering Information
For available options, such as packages or high/low protection, or for further information, contact your Micron
sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by
device type is available at www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Chart
MT 28E W 512 A B A 1 H JS - 0 S IT ES
Micron Technology Production Status
Blank = Production
Part Family ES = Engineering sample
28E = Embedded Parallel NOR
Operating Temperature
Voltage IT = 40C to +85C
W = 2.73.6V V core
CC
Special Options
Density S = Standard
128 = 128Mb
256 = 256Mb Security Features
512 = 512Mb 0 = Standard default security
01G = 1Gb 1 = OTP configurable
02G = 2Gb
Package Codes
Stack JS = 56-pin TSOP, 14mm x 20mm
A = Single die PC = 64-ball LBGA, 11mm x 13mm
B = Two die (All packages are lead-free, halogen-free,
RoHS-compliant)
Device Generation
Block Structure
B = 2nd generation
H = High lock
L = Low lock
Die Revision
A = Rev A
Configuration
1 = x8, x16
PDF: 09005aef8587f25a Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
mt28ew_1gb.pdf - Rev. F 05/18 EN 2014 Micron Technology, Inc. All rights reserved.