1Gb: x16, 3V, MT28EW Automotive Parallel NOR Flash
Features
Parallel NOR Flash Automotive Memory
MT28EW01GABA1xJS-0AAT, MT28EW01GABA1xPC-0AAT
BLANK CHECK operation to verify an erased block
Features
CYCLIC REDUNDANCY CHECK (CRC) operation to
Single-level cell (SLC) process technology
verify a program pattern
Density: 1Gb
V /WP# protection
PP
Supply voltage
Protects first or last block regardless of block
V = 2.73.6V (program, erase, read)
CC protection settings
V = 1.65 - V (I/O buffers)
CCQ CC Software protection
Asynchronous random/page read
Volatile protection
Page size: 16 words or 32 bytes
Nonvolatile protection
Page access: 20ns (V = V = 2.7-3.6V)
CC CCQ Password protection
Random access: 105ns (V = V = 2.7-3.6V)
CC CCQ Extended memory block
Random access: 110ns (V = 1.65-V )
CCQ CC 128-word (256-byte) block for permanent, secure
Buffer program (512-word program buffer)
identification
2.0 MB/s (TYP) when using full buffer program
Programmed or locked at the factory or by the
2.5 MB/s (TYP) when using accelerated buffer
customer
program (V )
HH JESD47-compliant
Word/Byte program: 25us per word (TYP)
100,000 (minimum) ERASE cycles per block
Block erase (128KB): 0.2s (TYP)
Data retention: 20 years (TYP)
Memory organization
Package
Uniform blocks: 128KB or 64KW each
56-pin TSOP, 14 x 20mm (JS)
x8/x16 data bus
64-ball LBGA, 11 x 13mm (PC)
Program/erase suspend and resume capability
RoHS-compliant, halogen-free packaging
Read from another block during a PROGRAM
Automotive operating temperature
SUSPEND operation
Ambient: 40C to +105C
Read or program another block during an ERASE
SUSPEND operation
Unlock bypass, block erase, chip erase, and write to
buffer capability
09005aef85e6c8e4 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
mt28ew_2nd_gen_1gb_automotive.pdf - Rev. G 05/18 EN 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x16, 3V, MT28EW Automotive Parallel NOR Flash
Features
Part Numbering Information
For available options, such as packages or high/low protection, or for further information, contact your Micron
sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by
device type is available at www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Chart
H
MT 28E W 512 A BA 1 JS - 0 A AT ES
Micron Technology Production Status
Blank = Production
Part Family ES = Engineering sample
28E = Embedded Parallel NOR
Operating Temperature
AT = 40C to +105C
Voltage
(Grade 2 AEC-Q100)
W = 2.73.6V V core
CC
Density Special Options
A = Automotive quality
128 = 128Mb
256 = 256Mb
512 = 512Mb Security Features
01G = 1Gb 0 = Standard default security
02G = 2Gb 1 = OTP configurable
Package Codes
Stack
JS = 56-pin TSOP, 14mm x 20mm
A = Single die
B = Two die PC = 64-ball LBGA, 11mm x 13mm
(All packages are lead-free, halogen-free,
RoHS-compliant)
Device generation
B = Second generation
Block Structure
Die Revision H = High lock
A = Rev A L = Low lock
Configuration
1 = x8, x16
09005aef85e6c8e4 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
mt28ew_2nd_gen_1gb_automotive.pdf - Rev. G 05/18 EN 2014 Micron Technology, Inc. All rights reserved.