Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A J/K/M ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A K/M CBB, MT29F128G08AUCBB Operation status byte provides software method for Features detecting 1 Open NAND Flash Interface (ONFI) 2.1-compliant Operation completion Single-level cell (SLC) technology Pass/fail condition Organization Write-protect status Page size x8: 4320 bytes (4096 + 224 bytes) Data strobe (DQS) signals provide a hardware meth- Block size: 128 pages (512K +28K bytes) od for synchronizing data DQ in the synchronous Plane size: 2 planes x 2048 blocks per plane interface Device size: 16Gb: 4096 blocks Copyback operations supported within the plane 32Gb: 8192 blocks from which data is read 64Gb: 16,384 blocks Quality and reliability 128Gb: 32,768 blocks Data retention: 10 years Synchronous I/O performance Endurance: 100,000 PROGRAM/ERASE cycles Up to synchronous timing mode 4 Operating temperature: Clock rate: 12ns (DDR) Commercial: 0C to +70C Read/write throughput per pin: 166 MT/s Industrial (IT): 40C to +85C Asynchronous I/O performance Package Up to asynchronous timing mode 4 52-pad LGA t t RC/ WC: 25ns (MIN) 48-pin TSOP Array performance 100-ball BGA Read page: 25s (MAX) Note: 1. The ONFI 2.1 specification is available at Program page: 230s (TYP) www.onfi.org. Erase block: 700s (TYP) Operating Voltage Range V : 2.73.6V CC V : 1.71.95V, 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 107). RESET (FFh) required as first command after power- on PDF: 09005aef838cada2 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 Rev. E 3/10 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 16G 08 A B A B A WP ES :B Micron Technology Design Revision B = Second revision NAND Flash 29F = NAND Flash memory Production Status Blank = Production ES = Engineering sample Density 16G = 16Gb 32G = 32Gb Reserved for Future Use 64G = 64Gb 128G = 128Gb Blank Device Width Operating Temperature Range 08 = 8 bits Blank = Commercial (0C to +70C) IT = Industrial (40C to +85C) Level Speed Grade (synchronous mode only) Bit/Cell -12 = 166 MT/s A 1-bit Package Code 1 Classification C5 = 52-pad VLGA 14mm x 18mm x 1.0mm 1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm Die of CE of R/B I/O 1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm B 1 1 1 Common 1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm 1 E 2 2 2 Separate WP = 48-pin TSOP (CPL) F 2 2 2 Common J 4 2 2 Common Interface K 4 2 2 Separate A = Async only M 4 4 4 Separate B = Sync/Async U 8 4 4 Separate Generation Feature Set B = Second set of device features Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) CC CCQ C = V : 3.3V (2.73.6V), V : 1.8V (1.71.95V) CC CCQ 1. Pb-free package. Note: PDF: 09005aef838cada2 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 Rev. E 3/10 EN 2009 Micron Technology, Inc. All rights reserved.