X-On Electronics has gained recognition as a prominent supplier of MT29F1G08ABBFAH4-ITE:F NAND Flash across the USA, India, Europe, Australia, and various other global locations. MT29F1G08ABBFAH4-ITE:F NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

MT29F1G08ABBFAH4-ITE:F Micron

MT29F1G08ABBFAH4-ITE:F electronic component of Micron
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Part No.MT29F1G08ABBFAH4-ITE:F
Manufacturer: Micron
Category: NAND Flash
Description: NAND Flash SLC 1G 128MX8 FBGA
Datasheet: MT29F1G08ABBFAH4-ITE:F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1993 ea
Line Total: USD 3.2 
Availability - 671
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
671
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1993
10 : USD 2.6334
100 : USD 2.437
1000 : USD 2.3562
2520 : USD 2.2984
5040 : USD 2.2869
10080 : USD 2.2638
25200 : USD 2.2407

   
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We are delighted to provide the MT29F1G08ABBFAH4-ITE:F from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT29F1G08ABBFAH4-ITE:F and other electronic components in the NAND Flash category and beyond.

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Micron Confidential and Proprietary 1Gb: x8 NAND Flash Memory Features NAND Flash Memory MT29F1G08ABAFAWP-ITE:F, MT29F1G08ABAFAH4-ITE:F, MT29F1G08ABBFAH4-ITE:F 2 ECC: 8-bit internal ECC is enabled by default. It Features can not be disabled 1 Open NAND Flash Interface (ONFI) 1.0-compliant Blocks 7-0 are valid when shipped from factory with Single-level cell (SLC) technology ECC Organization RESET (FFh) required as first command after pow- Page size x8: 2176 bytes (2048 + 128 bytes) er-on Block size: 64 pages (128K + 8K bytes) Alternate method of device initialization after pow- Plane size: 1 planes x 1024 blocks per plane er-up (contact factory) Device size: 1Gb: 1024 blocks Internal data move operations supported within the Asynchronous I/O performance plane from which data is read t t RC/ WC: 20ns/20ns (3.3V), 30ns/30ns (1.8V) Quality and reliability Array performance Endurance: 100,000 PROGRAM/ERASE cycles Read page: 80s Data retention: JESD47G-compliant see qualifi- Program page: 220s (TYP 3.3V/1.8V) cation report Erase block: 2ms (TYP) Additional: Uncycled data retention: 10 years Command set: ONFI NAND Flash Protocol 24/7 85C Advanced command set Operating voltage range Program page cache mode V : 2.73.6V CC Read page cache mode V : 1.71.95V CC Permanent block locking (blocks 47:0) Operating temperature: One-time programmable (OTP) mode Industrial (IT): 40C to +85C Block lock (1.8V only) Package 3 Programmable drive strength 48-pin TSOP type 1, CPL Read unique ID 63-ball VFBGA Internal data move Operation status byte provides software method for 1. The ONFI 1.0 specification is available at Notes: detecting www.onfi.org. Operation completion 2. Refer to the Part Numbering Information to Pass/Fail condition check the default status of the ECC. If ECC is enabled by default, it can not be disabled. Write-protect status 3. CPL = Center parting line. Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion WP signal: Write protect entire device CCMTD-1725822587-10323 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m78a 1gb ecc on embedded nand.pdf Rev. E 6/19 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 1Gb: x8 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 A B A F A H4 - AAT ES :F Design Revision (shrink) Micron Technology D = Design Revision D Product Family E = Design Revision E 29F = NAND Flash memory F = Design Revision F G = Design Revision G Density 1G = 1Gb Production Status 2G = 2Gb Blank = Production 4G = 4Gb ES = Engineering sample 8G = 8Gb MS = Mechanical sample QS = Qualification sample 16G = 16Gb Device Width Special Options 08 = 8-bit E = Internal ECC enabled by default (Parallel) 16 = 16-bit Blank = Internal ECC disabled by default (Parallel) Level Operating Temperature Range A = SLC Blank = Commercial (0C to +70C) IT = Industrial (40C to +85C) Classification AIT = Automotive Industrial (40C to +85C) Mark Die nCE RnB I/O Channel AAT = Automotive (40C to +105C) B 1 1 1 1 Speed Grade D 2 1 1 1 12 = 166 MT/s (synchronous mode) J 4 2 2 1 Blank = Asynchronous mode Operating Voltage Range Package Code A = 3.3V (2.73.6V) SF = 16-pin SO (10.3mm x 10.3mm x 2.65mm) B = 1.8V (1.71.95V) WB = 8-pin U-PDFN (8mm x 6mm x 0.65mm) C = V : 3.3V (2.73.6V) V : 1.8V (1.71.95V) CC CCQ W9 = 8-pin W-PDFN (8mm x 6mm) 12 = 24-ball TBGA (6mm x 8mm x 1.2mm) Generation Feature Set WP = 48-pin TSOP Type 1 D = Feature set D HC = 63-ball VFBGA (10.5mm x 13mm x 1.0mm) E = Feature set E H4 = 63-ball VFBGA (9mm x 11mm x1.0mm) F = Feature set F G = Feature set G Interface A = Asynchronous only B = Sync/Async CCMTD-1725822587-10323 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m78a 1gb ecc on embedded nand.pdf Rev. E 6/19 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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