X-On Electronics has gained recognition as a prominent supplier of MT29F1G16ABBDAH4:D NAND Flash across the USA, India, Europe, Australia, and various other global locations. MT29F1G16ABBDAH4:D NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

MT29F1G16ABBDAH4:D Micron

MT29F1G16ABBDAH4:D electronic component of Micron
MT29F1G16ABBDAH4:D Micron
MT29F1G16ABBDAH4:D NAND Flash
MT29F1G16ABBDAH4:D  Semiconductors

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Part No. MT29F1G16ABBDAH4:D
Manufacturer: Micron
Category: NAND Flash
Description: SLC NAND Flash Parallel 1.8V 1Gbit 64M x 16bit 63-Pin VFBGA Tray
Datasheet: MT29F1G16ABBDAH4:D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 4.8348 ea
Line Total: USD 53.18 
Availability - 0
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 11
Multiples : 1
11 : USD 4.8348
25 : USD 4.3372
50 : USD 4.1995
100 : USD 3.9254

   
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Programmable
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We are delighted to provide the MT29F1G16ABBDAH4:D from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT29F1G16ABBDAH4:D and other electronic components in the NAND Flash category and beyond.

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Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Ready/busy (R/B ) signal provides a hardware Features method for detecting operation completion 1 Open NAND Flash Interface (ONFI) 1.0-compliant WP signal: write protect entire device Single-level cell (SLC) technology First block (block address 00h) is valid when ship- Organization ped from factory with ECC. For minimum required Page size x8: 2112 bytes (2048 + 64 bytes) ECC, see Error Management. Page size x16: 1056 words (1024 + 32 words) Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Block size: 64 pages (128K + 4K bytes) cles are less than 1000 Device size: 1Gb: 1024 blocks RESET (FFh) required as first command after pow- Asynchronous I/O performance er-on t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Alternate method of device initialization (Nand In- 4 Array performance it) after power up (contact factory) 3 Read page: 25s Quality and reliability 3 Program page: 200s (TYP, 3.3V and 1.8V) Data retention: 10 years Erase block: 700s (TYP) Endurance: 100,000 PROGRAM/ERASE cycles Command set: ONFI NAND Flash Protocol Operating Voltage Range Advanced command set V : 2.73.6V CC 5 Program page cache mode V : 1.71.95V CC 5 Read page cache mode Operating temperature: One-time programmable (OTP) mode Commercial: 0C to +70C Read unique ID Extended (ET): 40C to +85C Internal data move Package 2 Operation status byte provides software method for 48-pin TSOP type 1, CPL detecting 63-ball VFBGA Operation completion 1. The ONFI 1.0 specification is available at Notes: Pass/fail condition www.onfi.org. Write-protect status 2. CPL = Center parting line. Internal data move operations supported within the t 3. See Electrical Specifications for R ECC and device from which data is read t PROG ECC specifications. 4. Available only in the 1.8V VFBGA package. 5. Supported only with ECC disabled. PDF: 09005aef83e5ffed Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m68a 1gb nand.pdf - Rev. R 1/18 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 1G 08 A B B D A HC IT ES :D Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density MS = Mechanical sample 1G = 1Gb QS = Qualification sample Device Width Special Options 08 = 8-bit Blank 16 = 16-bit X = Premium lifecycle product (PLP) Operating Temperature Range Level Blank = Commercial (0C to +70C) A= SLC IT = Industrial (40C to +85C) Classification Mark Die nCE RnB I/O Channels Speed Grade B 1 1 1 1 Blank Package Code Operating Voltage Range WP = 48-pin TSOP 1 A = 3.3V (2.73.6V) HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) B = 1.8V (1.71.95V) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Feature Set D = Feature set D Interface A = Async only PDF: 09005aef83e5ffed Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m68a 1gb nand.pdf - Rev. R 1/18 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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