X-On Electronics has gained recognition as a prominent supplier of MT41K128M16JT-107 IT:K TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K128M16JT-107 IT:K TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K128M16JT-107 IT:K TR Micron

MT41K128M16JT-107 IT:K TR electronic component of Micron
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Part No.MT41K128M16JT-107 IT:K TR
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR3 2G 128MX16 FBGA
Datasheet: MT41K128M16JT-107 IT:K TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.2021 ea
Line Total: USD 4.2 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 5.1171
4000 : USD 5.045
8000 : USD 4.9009
12000 : USD 4.7928
16000 : USD 4.6126
20000 : USD 4.5405
200000 : USD 4.4685

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 4.2021
10 : USD 3.5334
100 : USD 3.4107
250 : USD 3.2881
500 : USD 3.1766
1000 : USD 3.1098
2000 : USD 2.9983

   
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We are delighted to provide the MT41K128M16JT-107 IT:K TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K128M16JT-107 IT:K TR and other electronic components in the DRAM category and beyond.

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2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16 16 Meg x 16 x 8 banks Automatic self refresh (ASR) Description Write leveling The 1.35V DDR3L SDRAM device is a low-voltage ver- Multipurpose register sion of the 1.5V DDR3 SDRAM device. Refer to the Output driver calibration DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Options Marking Configuration Features 512 Meg x 4 512M4 V = V = 1.35V (1.2831.45V) DD DDQ 256 Meg x 8 256M8 Backward-compatible to V = V = 1.5V 0.075V DD DDQ 128 Meg x 16 128M16 Differential bidirectional data strobe FBGA package (Pb-free) x4, x8 8n-bit prefetch architecture 78-ball (8mm x 10.5mm x 1.2mm) Differential clock inputs (CK, CK#) DA Rev. K 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball (8mm x 14mm x 1.2mm) JT for data, strobe, and mask signals Rev. K Programmable CAS (READ) latency (CL) Timing cycle time Programmable posted CAS additive latency (AL) 1.07ns @ CL = 13 (DDR3-1866) -107 Programmable CAS (WRITE) latency (CWL) 1.25ns @ CL = 11 (DDR3-1600) -125 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.5ns @ CL = 9 (DDR3-1333) -15E (via the mode register set [MRS]) 1.875ns @ CL = 7 (DDR3-1066) -187E Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Commercial (0C T +95C) None C T of 95C C Industrial (40C T +95C) IT C 64ms, 8192-cycle refresh up to 85C Revision :K 32ms, 8192-cycle refresh at >85C to 95C Self refresh temperature (SRT) Table 1: Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1, 2, 3 -107 1866 13-13-13 13.91 13.91 13.91 1, 2 -125 1600 11-11-11 13.75 13.75 13.75 1 -15E 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 1. Backward compatible to 1066, CL = 7 (-187E). Notes: 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). CCMTD-1725822587-7895 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 2Gb_DDR3L.pdf - Rev. O 09/18 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16 Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 32K A[14:0] 32K A[14:0] 16K A[13:0] Bank address 8 BA[2:0] 8 BA[2:0] 8 BA[2:0] Column address 2K A[11, 9:0] 1K A[9:0] 1K A[9:0] Figure 1: DDR3L Part Numbers Example Part Number: MT41K256M8DA-107:K - : MT41K Configuration Package Speed Revision :K Revision Configuration 512 Meg x 4 512M4 Temperature 256 Meg x 8 256M8 Commercial None 128 Meg x 16 128M16 Industrial temperature IT Package Speed Grade t 78-ball 8mm x 10.5mm FBGA -107 DA CK = 1.071ns, CL = 13 t 96-ball 8mm x 14mm FBGA JT -125 CK = 1.25ns, CL = 11 t -15E CK = 1.5ns, CL = 9 t -187E CK = 1.87ns, CL = 7 Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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