X-On Electronics has gained recognition as a prominent supplier of MT46V64M8P-5B AIT:J DRAM across the USA, India, Europe, Australia, and various other global locations. MT46V64M8P-5B AIT:J DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT46V64M8P-5B AIT:J Micron

MT46V64M8P-5B AIT:J electronic component of Micron
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Part No.MT46V64M8P-5B AIT:J
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR 512M 64MX8 TSOP
Datasheet: MT46V64M8P-5B AIT:J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1080
Multiples : 1
1080 : USD 7.6034
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MOQ : 1
Multiples : 1
1 : USD 10.4139
25 : USD 9.1651
50 : USD 9.145
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Obsolete
   
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We are delighted to provide the MT46V64M8P-5B AIT:J from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT46V64M8P-5B AIT:J and other electronic components in the DRAM category and beyond.

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512Mb: x8, x16 Automotive DDR SDRAM Features Automotive DDR SDRAM MT46V64M8 16 Meg x 8 x 4 banks MT46V32M16 8 Meg x 16 x 4 banks Features Options Marking V = 2.5V 0.2V, V = 2.5V 0.2V Configuration DD DDQ 1 V = 2.6V 0.1V, V = 2.6V 0.1V (DDR400) 64 Meg x 8 (16 Meg x 8 x 4 banks) 64M8 DD DDQ Bidirectional data strobe (DQS) transmitted/ 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16 Plastic package received with data, i.e., source-synchronous data 66-pin TSOP TG capture (x16 has two one per byte) 66-pin TSOP (Pb-free) P Internal, pipelined double-data-rate (DDR) 60-ball FBGA (8mm x 12.5mm) CV architecture two data accesses per clock cycle 60-ball FBGA (8mm x 12.5mm) CY Differential clock inputs (CK and CK ) (Pb-free) Commands entered on each positive CK edge Timing cycle time DQS edge-aligned with data for READs center- 5ns CL = 3 (DDR400) -5B aligned with data for WRITEs Self refresh DLL to align DQ and DQS transitions with CK Standard None Four internal banks for concurrent operation Low-power self refresh L Data mask (DM) for masking write data Temperature rating Industrial (40C to +85C) AIT (x16 has two one per byte) Automotive (40C to +105C) AAT Programmable burst lengths: 2, 4, or 8 Revision Auto refresh x8, x16 :J 64ms, 8192-cycle(AIT) 16ms, 8192-cycle (AAT) Notes: 1. DDR400 devices operating at < DDR333 con- Self refresh (not available on AAT devices) ditions can use V /V = 2.5V +0.2V. DD DDQ Longer-lead TSOP for improved reliability (OCPL) 2. Not all options listed can be combined to 2.5V I/O (SSTL 2 compatible) define an offered product. Use the Part Cata- Concurrent auto precharge option is supported log Search on www.micron.com for product t t t RAS lockout supported ( RAP = RCD) offerings and availability. AEC-Q100 PPAP Submission 8D Response time PDF:09005aef845d3bfc/Source: 09005aef845d3b9c Micron Technology, Inc., reserves the right to change products or specifications without notice. 512Mb DDR x4x8x16 D1.fm - 512Mb AIT-AAT DDR: Rev. B Core DDR Rev. C 7/18 EN 1 2000 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512Mb: x8, x16 Automotive DDR SDRAM Features Table 1: Key Timing Parameters CL = CAS (READ) latency data-out window is MIN clock rate with 50% duty cycle at CL = 2, CL = 2.5 and CL = 3 Clock Rate (MHz) Data-Out Speed Grade CL = 2 CL = 2.5 CL = 3 Window Access Window DQSDQ Skew -5B 133 167 200 1.6ns 0.70ns 0.40ns -6 133 167 n/a 2.1ns 0.70ns 0.40ns 6T 133 167 n/a 2.0ns 0.70ns 0.45ns -75E/-75Z 133 133 n/a 2.5ns 0.75ns 0.50ns -75 100 133 n/a 2.5ns 0.75ns 0.50ns Table 2: Addressing Parameter 64 Meg x 8 32 Meg x 16 Configuration 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks Refresh count 8K 8K Row address 8K (A0A12) 8K (A0A12) Bank address 4 (BA0, BA1) 4 (BA0, BA1) Column address 2K (A0-A9, A11) 1K (A0A9) Table 3: Speed Grade Compatibility Marking PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600 (2-2-2) 1 Yes Yes Yes Yes Yes Yes -5B Yes Yes Yes Yes Yes -6 Yes Yes Yes Yes Yes -6T Yes Yes Yes Yes -75E Yes Yes Yes -75Z Yes Yes -75 -5B -6/-6T -75E -75Z -75 -75 Notes: 1. The -5B device is backward compatible with all slower speed grades. The voltage range of -5B device operating at slower speed grades is V = V = 2.5V 0.2V. DD DDQ PDF:09005aef845d3bfc/Source: 09005aef845d3b9c Micron Technology, Inc., reserves the right to change products or specifications without notice. 512Mb DDR x4x8x16 D1.fm - 512Mb AIT-AAT DDR: Rev. B Core DDR Rev. B 7/11 EN 2 2000 Micron Technology, Inc. All rights reserved.

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8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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