X-On Electronics has gained recognition as a prominent supplier of MT47H128M16RT-25E AIT:C DRAM across the USA, India, Europe, Australia, and various other global locations. MT47H128M16RT-25E AIT:C DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT47H128M16RT-25E AIT:C Micron

MT47H128M16RT-25E AIT:C electronic component of Micron
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Part No.MT47H128M16RT-25E AIT:C
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V Automotive 84-Pin FBGA
Datasheet: MT47H128M16RT-25E AIT:C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.948 ea
Line Total: USD 13.95 
Availability - 579
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
579
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 13.948
10 : USD 12.727
25 : USD 12.243
2520 : USD 12.232

   
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We are delighted to provide the MT47H128M16RT-25E AIT:C from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT47H128M16RT-25E AIT:C and other electronic components in the DRAM category and beyond.

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2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 32 Meg x 8 x 8 banks MT47H128M16 16 Meg x 16 x 8 banks 1 Options Marking Features Configuration Industrial and automotive temperature compliant 256 Meg x 8 (32 Meg x 8 x 8 banks) 256M8 V = 1.8V 0.1V, V = 1.8V 0.1V DD DDQ 128 Meg x 16 (16 Meg x 16 x 8 banks) 128M16 JEDEC-standard 1.8V I/O (SSTL 18-compatible) FBGA package (Pb-free) x8 60-ball FBGA (9mm x 11.5mm) EB Differential data strobe (DQS, DQS ) option FBGA package (Pb-free) x16 4n-bit prefetch architecture 84-ball FBGA (9mm x 12.5mm) RT Duplicate output strobe (RDQS) option for x8 FBGA package (lead solder) x16 DLL to align DQ and DQS transitions with CK 84-ball FBGA (9mm x 12.5mm) PK 8 internal banks for concurrent operation Timing cycle time Programmable CAS latency (CL) 2.5ns CL = 5 (DDR2-800) -25E 3.0ns CL = 5 (DDR2-667) -3 Posted CAS additive latency (AL) t Self refresh WRITE latency = READ latency - 1 CK Standard None Programmable burst lengths (BL): 4 or 8 Operating temperature Adjustable data-output drive strength Industrial (40C T +95C AIT C 32ms, 8192-cycle refresh 40C T +85C) A On-die termination (ODT) Automotive (40C T , T AAT C A +105C) RoHS-compliant Revision :C Supports JEDEC clock jitter specification 1. Not all options listed can be combined to AEC-Q100 Note: define an offered product. Use the Part PPAP submisson Catalog Search on www.micron.com for 8D response time product offerings and availability. Table 1: Key Timing Parameters Data Rate (MT/s) t Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 RC (ns) -25E n/a 533 800 800 n/a 55 -25 n/a 533 667 800 n/a 55 -3 400 533 667 n/a n/a 55 PDF: 09005aef8441c566 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 2gbddr2 ait aat.pdf Rev. D 10/11 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb: x8, x16 Automotive DDR2 SDRAM Features Table 2: Addressing Parameter 256 Meg x 8 128 Meg x 16 Configuration 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K Row address A 14:0 (16K) A 13:0 (16K) Bank address BA 2:0 (8) BA 2:0 (8) Column address A 9:0 (1K) A 9:0 (1K) Figure 1: 2Gb DDR2 Part Numbers Example Part Number: MT47H128M16RT-25E :C - : MT47H Configuration Package Speed Revision :C Revision AIT Automotive industrial temperature Configuration 256 Meg x 8 256M8 AAT Automotive temperature 128 Meg x 16 128M16 Speed Grade t Package -25E CK = 2.5ns, CL = 5 Pb-free t -3 CK = 3ns, CL = 5 60-ball 9mm x 11.5mm FBGA EB 84-ball 9mm x 12.5mm FBGA RT Lead solder 84-ball 9mm x 12.5mm FBGA PK 1. Not all speeds and configurations are available in all packages. Note: FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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