X-On Electronics has gained recognition as a prominent supplier of MT40A256M16GE-083E AAT:B TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT40A256M16GE-083E AAT:B TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT40A256M16GE-083E AAT:B TR Micron

MT40A256M16GE-083E AAT:B TR electronic component of Micron
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Part No.MT40A256M16GE-083E AAT:B TR
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR4 4G 256MX16 FBGA
Datasheet: MT40A256M16GE-083E AAT:B TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 13.3312
10 : USD 12.2472
25 : USD 12.0744
50 : USD 11.9232
100 : USD 11.1672
250 : USD 10.6812
500 : USD 10.6164
1000 : USD 10.314
2000 : USD 10.2384
N/A

Obsolete
   
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We are delighted to provide the MT40A256M16GE-083E AAT:B TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT40A256M16GE-083E AAT:B TR and other electronic components in the DRAM category and beyond.

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4Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A512M8 MT40A256M16 JEDEC JESD-79-4 compliant Features AEC-Q100 V = V = 1.2V 60mV DD DDQ PPAP submission V = 2.5V 125mV/+250mV PP 8D response time On-die, internal, adjustable V generation REFDQ 1 Options Marking 1.2V pseudo open-drain I/O Configuration Refresh maximum interval time at T temperature C 512 Meg x 8 512M8 range: 256 Meg x 16 256M16 64ms at 40C to 85C BGA package (Pb-free) x8 32ms at 85C to 95C 78-ball (9mm x 10.5mm) Rev. B RH 16ms at 96C to 105C FBGA package (Pb-free) x16 8ms at 106C to 125C 96-ball (9mm x 14mm) Rev. B GE 16 internal banks ( x8): 4 groups of 4 banks each Timing cycle time 8 internal banks (x16): 2 groups of 4 banks each 0.750ns CL = 18 (DDR4-2666) -075E 8n-bit prefetch architecture 0.833ns CL = 16 (DDR4-2400) -083E Programmable data strobe preambles Product certification Data strobe preamble training Automotive A Command/Address latency (CAL) Operating temperature Multipurpose register read and write capability Industrial (40C T +95C) IT Write leveling C Automotive (40C T +105C) AT Self refresh mode C 3 Ultra-high (40C T +125C) UT Low-power auto self refresh (LPASR) C Revision :B Temperature controlled refresh (TCR) Fine granularity refresh 1. Not all options listed can be combined to Notes: Self refresh abort define an offered product. Use the part Maximum power saving catalog search on 4Gb: x8, x16 Automotive DDR4 SDRAM Features Table 1: Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1 -075E 2666 18-18-18 13.5 13.5 13.5 -083E 2400 16-16-16 13.32 13.32 13.32 Note: 1. Backward compatible to 2400, CL = 16 Table 2: Addressing Parameter 512 Meg x 8 256 Meg x 16 Number of bank groups 4 2 Bank group address BG 1:0 BG0 Bank count per group 4 4 Bank address in bank group BA 1:0 BA 1:0 Row addressing 32K (A 14:0 ) 32K (A 14:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example Example Part Number: MT40A512M8RH-075EAAT:B - : Configuration Package Speed Revision MT40A Revision Configuration Mark :B 512 Meg x 8 512M8 256 Meg x 16 256M16 Case Temperature Mark Commercial Package Mark None 78-ball 8.0mm x 10.5mm FBGA RH Industrial temperature IT Automotive AT 96-ball 9.0mm x 14.0mm FBGA GE Ultra-high UT Mark Speed Grade t -075E CK = 0.750ns, CL = 18 Product certification Mark t -083E CK = 0.833ns, CL = 16 Automotive A CCMTD-1725822587-10418 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 4gb auto ddr4 sdram z90b.pdf - Rev. G 08/18 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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