MT40A4G4NRE-083E:B Micron

16Gb: x4, x8 TwinDie DDR4 SDRAM Description TwinDie 1.2V DDR4 SDRAM MT40A4G4 128 Meg x 4 x 16 Banks x 2 Ranks MT40A2G8 64 Meg x 8 x 16 Banks x 2 Ranks Options Marking Description Configuration The 16Gb (TwinDie) DDR4 SDRAM uses 128 Meg x 4 x 16 banks x 2 ranks 4G4 Microns 8Gb DDR4 SDRAM die (essentially two ranks 64 Meg x 8 x 16 banks x 2 ranks 2G8 of the 8Gb DDR4 SDRAM). Refer to Microns 8Gb FBGA package (Pb-free) DDR4 SDRAM data sheet for the specifications not in- 78-ball FBGA FSE cluded in this document. Specifications for base part (9.5mm x 13mm x 1.2mm) Die Rev :A number MT40A2G4 correlate to TwinDie manufactur- 78-ball FBGA NRE ing part number MT40A4G4 specifications for base (8.0mm x 12mm x 1.2mm) Die Rev :B part number MT40A1G8 correlate to TwinDie manu- 1 Timing cycle time facturing part number MT40A2G8. 0.750ns CL = 18 (DDR4-2666) -075E 0.833ns CL = 16 (DDR4-2400) -083E Features 0.833ns CL = 17 (DDR4-2400) -083 Uses 8Gb Micron die 0.937ns CL = 15 (DDR4-2133) -093E Two ranks (includes dual CS , ODT, and CKE balls) 0.937ns CL = 16 (DDR4-2133) -093 Each rank has 4 groups of 4 internal banks for con- Self refresh current operation Standard None V = V = 1.2V (1.141.26V) DD DDQ Operating temperature 1.2V V -terminated I/O DDQ Commercial (0C T 95C) None C JEDEC-standard ball-out Revision :A Low-profile package :B T of 0C to 95C C 0C to 85C: 8192 refresh cycles in 64ms Note: 1. CL = CAS (READ) latency. 85C to 95C: 8192 refresh cycles in 32ms Table 1: Key Timing Parameters Data Rate 1 t t t t Speed Grade (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -075E 2666 18-18-18 13.50 13.50 13.50 -075 2666 19-19-19 14.25 14.25 14.25 -083E 2400 16-16-16 13.32 13.32 13.32 -083 2400 17-17-17 14.16 (13.75) 14.16 (13.75) 14.16 (13.75) -093E 2133 15-15-15 14.06 (13.50) 14.06 (13.50) 14.06 (13.50) -093 2133 16-16-16 15.00 15.00 15.00 Note: 1. Refer to the Speed Bin Tables for additional details. PDF: CCMTD-1725822587-6665 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 16Gb x4 x8 2cs TwinDie.pdf - Rev. F 06/18 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.16Gb: x4, x8 TwinDie DDR4 SDRAM Description Table 2: Addressing Parameter 4096 Meg x 4 2048 Meg x 8 Configuration 128 Meg x 4 x 16 banks x 2 ranks 64 Meg x 8 x 16 banks x 2 ranks Bank group address BG 1:0 BG 1:0 Bank count per group 4 4 Bank address in bank group BA 1:0 BA 1:0 Row address 128K A 16:0 64K A 15:0 Column address 1K A 9:0 1K A 9:0 PDF: CCMTD-1725822587-6665 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 16Gb x4 x8 2cs TwinDie.pdf - Rev. F 06/18 EN 2015 Micron Technology, Inc. All rights reserved.