X-On Electronics has gained recognition as a prominent supplier of MT40A512M16HA-083E:A dram across the USA, India, Europe, Australia, and various other global locations. MT40A512M16HA-083E:A dram are a product manufactured by Micron. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

MT40A512M16HA-083E:A Micron

MT40A512M16HA-083E:A electronic component of Micron
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Part No.MT40A512M16HA-083E:A
Manufacturer: Micron
Category:DRAM
Description: DRAM DDR4 8G 512MX16 FBGA
Datasheet: MT40A512M16HA-083E:A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

220: USD 21.0512 ea
Line Total: USD 4631.26

Availability - 0
MOQ: 220  Multiples: 220
Pack Size: 220
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 220
Multiples : 220
220 : USD 21.0512

     
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We are delighted to provide the MT40A512M16HA-083E:A from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT40A512M16HA-083E:A and other electronic components in the DRAM category and beyond.

8Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 2 Gig x 4 2G4 V = 2.5V, 125mV, +250mV PP 1 Gig x 8 1G8 On-die, internal, adjustable V generation REFDQ 512 Meg x 16 512M16 1.2V pseudo open-drain I/O 78-ball FBGA package (Pb-free) x4, T maximum up to 95C C x8 64ms, 8192-cycle refresh up to 85C 9mm x 13.2mm Rev. A PM 32ms, 8192-cycle refresh at >85C to 95C 8mm x 12mm Rev. B, D, G WE 16 internal banks (x4, x8): 4 groups of 4 banks each 7.5mm x 11mm Rev. E, H, J SA 8 internal banks (x16): 2 groups of 4 banks each 96-ball FBGA package (Pb-free) x16 8n-bit prefetch architecture 9mm x 14mm Rev. A HA Programmable data strobe preambles 8mm x 14mm Rev. B JY Data strobe preamble training 7.5mm x 13.5mm Rev. D, E, H LY Command/Address latency (CAL) 7.5mm x 13mm Rev. J TB Multipurpose register READ and WRITE capability Timing cycle time Write leveling 0.625ns @ CL = 22 (DDR4-3200) -062E Self refresh mode 0.682ns @ CL = 21 (DDR4-2933) -068 Low-power auto self refresh (LPASR) 0.750ns @ CL = 19 (DDR4-2666) -075 Temperature controlled refresh (TCR) 0.750ns @ CL = 18 (DDR4-2666) -075E Fine granularity refresh 0.833ns @ CL = 17 (DDR4-2400) -083 Self refresh abort 0.833ns @ CL = 16 (DDR4-2400) -083E Maximum power saving 0.937ns @ CL = 15 (DDR4-2133) -093E Output driver calibration 1.071ns @ CL = 13 (DDR4-1866) -107E Nominal, park, and dynamic on-die termination Operating temperature (ODT) Commercial (0 T 95C) None C Data bus inversion (DBI) for data bus Industrial (40 T 95C) IT C Command/Address (CA) parity Revision :A, :B, :D, :E, Databus write cyclic redundancy check (CRC) :G, :H, :J Per-DRAM addressability 1. Not all options listed can be combined to Note: Connectivity test define an offered product. Use the part JEDEC JESD-79-4 compliant catalog search on 8Gb: x4, x8, x16 DDR4 SDRAM Features Table 1: Key Timing Parameters (Continued) 1 t t t t Speed Grade Data Rate (MT/s) Target CL- RCD- RP CL (ns) RCD (ns) RP (ns) -075 2666 19-19-19 14.25 14.25 14.25 -083E 2400 16-16-16 13.32 13.32 13.32 -083 2400 17-17-17 14.16 (13.75) 14.16 (13.75) 14.16 (13.75) -093E 2133 15-15-15 14.06 (13.50) 14.06 (13.50) 14.06 (13.50) -093 2133 16-16-16 15.00 15.00 15.00 -107E 1866 13-13-13 13.92 (13.50) 13.92 (13.50) 13.92 (13.50) Note: 1. Refer to the Speed Bin Tables for additional details. Table 2: Addressing Parameter 2048 Meg x 4 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 4 2 Bank group address BG[1:0] BG[1:0] BG0 Bank count per group 4 4 4 Bank address in bank group BA[1:0] BA[1:0] BA[1:0] Row addressing 128K (A[16:0]) 64K (A[15:0]) 64K (A[15:0]) Column addressing 1K (A[9:0]) 1K (A[9:0]) 1K (A[9:0]) 1 2 Page size 512B/1KB 1KB 2KB Notes: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. 2. Die rev-dependent. CCMTD-1725822587-9875 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb_ddr4_dram.pdf - Rev. O 10/18 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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