X-On Electronics has gained recognition as a prominent supplier of MT43A4G40200NFA-S15:A DRAM across the USA, India, Europe, Australia, and various other global locations. MT43A4G40200NFA-S15:A DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT43A4G40200NFA-S15:A Micron

MT43A4G40200NFA-S15:A electronic component of Micron
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Part No.MT43A4G40200NFA-S15:A
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip SDRAM 2G-Byte 4Gx4 1.2V 896-Pin BGA
Datasheet: MT43A4G40200NFA-S15:A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MT43A4G40200NFA-S15:A from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT43A4G40200NFA-S15:A and other electronic components in the DRAM category and beyond.

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Hybrid Memory Cube HMC Gen2 HMC Memory Features Hybrid Memory Cube HMC Gen2 MT43A4G40200 2GB 4H DRAM stack Options Marking HMC Memory Features Configuration V = 1.2V 0.06V DDM 2GB cube (4Gb x 4H DRAM stack) 4G4 V = 2.5V 0.125V CCP BGA package (Pb-free) 2GB configuration 4-link (31mm x 31mm) 2GB NFA 128 memory banks Operating temperature Configured as 16 independent memory vaults DRAM: (0C T 105C) None J Closed-page memory architecture Logic: (0C T 110C) None J Built-in memory controller for each vault PHY Automatic refresh control over all temperatures HMC Gen2 -S15 Internal ECC data correction Logic revision 02 Advanced RAS features including data scrubbing DRAM revision :A Post-assembly repair capability In-field repair for ultimate reliability Description Hybrid Memory Cube (HMC) is a single package con- HMC Interface Features taining four DRAM die and one logic die, all stacked V = 0.9V DD together using through-silicon via (TSV) technology. V , V , V = 1.2V TT TR DDPLL Within each cube, memory is organized vertically V = 1.5 V DDK portions of each memory die are combined with the 10 Gb/s, 12.5 Gb/s, or 15 Gb/s SerDes I/O interface corresponding portions of the other memory die in Up to four 16-lane, full-duplex serialized links the stack. Each grouping of memory partitions is com- Half-width link (8-lane) configuration also sup- bined with a corresponding section of the logic die, ported forming what is referred to as a vault. Up to 160 GB/s bandwidth Packet-based data/command interface Specifications within this data sheet are compatible Supports 16, 32, 48, 64, 80, 96, 112, and 128 byte da- with the HMC Consortium Specification. ta payloads per request Cyclic redundancy check (CRC) error detection for packets with automatic retry Power management supported per link Through-silicon via (TSV) technology Built-in self-test (BIST) JTAG interface (IEEE 1149.1-2001, 1149.6) 2 2 I C Interface (UM-10204 I C bus specification) 09005aef8462cb46 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 hmc_gen2.pdf - Rev. G 4/17 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Hybrid Memory Cube HMC Gen2 HMC Memory Features Figure 1: HMC Part Numbers Example Part Number: MT43A4G40100NFA-S15:A - : MT43A Config Package SerDes D Rev. L Rev. PV Configuration DRAM Die Revision 4Gb x 4 DRAM layers 4G4 Rev. A :A Logic Design Revision SerDes Link Description Revision 1 01 S15 15 Gb/s Revision 2 02 Package Description (mm) BGA, 4-link, 896-ball (31 x 31), 2GB NFA Product Variations Standard 00 09005aef8462cb46 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 hmc_gen2.pdf - Rev. G 4/17 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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