X-On Electronics has gained recognition as a prominent supplier of MT41K128M8DA-107 AIT:J DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K128M8DA-107 AIT:J DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K128M8DA-107 AIT:J Micron

MT41K128M8DA-107 AIT:J electronic component of Micron
MT41K128M8DA-107 AIT:J Micron
MT41K128M8DA-107 AIT:J DRAM
MT41K128M8DA-107 AIT:J  Semiconductors

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Part No. MT41K128M8DA-107 AIT:J
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3L SDRAM 1G-Bit 128Mx8 1.35V 78-Pin F-BGA
Datasheet: MT41K128M8DA-107 AIT:J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0

Multiples : 1440
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 9.2916
25 : USD 3.3903
50 : USD 3.3587
N/A

Obsolete
   
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We are delighted to provide the MT41K128M8DA-107 AIT:J from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K128M8DA-107 AIT:J and other electronic components in the DRAM category and beyond.

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1Gb: x8, x16 Automotive DDR3L SDRAM Description Automotive DDR3L SDRAM MT41K128M8 16 Meg x 8 x 8 banks MT41K64M16 8 Meg x 16 x 8 banks Write leveling Description Multipurpose register The 1.35V DDR3L SDRAM device is a low-voltage ver- Output driver calibration sion of the 1.5V DDR3 SDRAM device. Refer to the AEC-Q100 DDR3 (1.5V) SDRAM data sheet specifications when PPAP submission running in 1.5V compatible mode. 8D response time Features 1 Options Marking V = V = +1.35V (1.283V to 1.45V) DD DDQ Configuration Backward compatible to V = V = 1.5V 0.075V DD DDQ 128 Meg x 8 128M8 Differential bidirectional data strobe 64 Meg x 16 64M16 8n-bit prefetch architecture FBGA package (Pb-free) x8 Differential clock inputs (CK, CK ) 78-ball FBGA (8mm x 10.5mm) DA 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball FBGA (8mm x 14mm) TW for data, strobe, and mask signals Timing cycle time Programmable CAS (READ) latency (CL) 1.07ns CL = 13 (DDR3-1866) -107 Programmable CAS additive latency (AL) Product certification Programmable CAS (WRITE) latency (CWL) Automotive A Fixed burst length (BL) of 8 and burst chop (BC) of 4 Operating temperature (via the mode register set MRS ) Industrial (40C T +95C) IT C Selectable BC4 or BL8 on-the-fly (OTF) Automotive (40C T +105C) AT C Self refresh mode Revision :J T of -40C to 105C C 64ms, 8192-cycle refresh at -40C to 85C 1. Not all options listed can be combined to Notes: 32ms at 85C to 105C define an offered product. Use the part Self refresh temperature (SRT) catalog search on 1Gb: x8, x16 Automotive DDR3L SDRAM Description Table 2: Addressing (Continued) Parameter 128 Meg x 8 64 Meg x 16 Row address 16K A 13:0 8K A 12:0 Bank address 8 BA 2:0 8 BA 2:0 Column address 1K A 9:0 1K A 9:0 Page Size 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41K64M16DA-107AIT:J - : MT41K Configuration Package Speed Revision :J Revision Configuration Mark 128 Meg x 8 128M8 64 Meg x 16 64M16 Temperature Mark Industrial temperature IT Package Mark Automotive temperature AT 78-ball 8mm x 10.5mm FBGA DA 96-ball 8mm x 14mm FBGA TW Certification Mark Automotive A Mark Speed Grade t 107 CK = 1.07ns, CL = 13 1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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