X-On Electronics has gained recognition as a prominent supplier of MT41K512M8DA-107 AAT:P TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K512M8DA-107 AAT:P TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K512M8DA-107 AAT:P TR Micron

MT41K512M8DA-107 AAT:P TR electronic component of Micron
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Part No.MT41K512M8DA-107 AAT:P TR
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR3 4G 512MX8 FBGA
Datasheet: MT41K512M8DA-107 AAT:P TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.107 ea
Line Total: USD 8.11 
Availability - 3304
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3304
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 8.107
10 : USD 7.458
25 : USD 7.029
100 : USD 6.71
250 : USD 6.512
500 : USD 6.292
1000 : USD 6.072
2000 : USD 5.995
4000 : USD 5.995

   
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We are delighted to provide the MT41K512M8DA-107 AAT:P TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K512M8DA-107 AAT:P TR and other electronic components in the DRAM category and beyond.

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4Gb: x8, x16 Automotive DDR3L SDRAM Description Automotive DDR3L SDRAM MT41K512M8 64 Meg x 8 x 8 banks MT41K256M16 32 Meg x 16 x 8 banks Options Marking Description Configuration DDR3L SDRAM (1.35V) is a low voltage version of the 512 Meg x 8 512M8 DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM 256 Meg x 16 256M16 (Die Rev :E) data sheet specifications when running in FBGA package (Pb-free) x8 1.5V compatible mode. 78-ball (8mm x 10.5mm) DA FBGA package (Pb-free) x16 Features 96-ball (8mm x 14mm) TW V = V = 1.35V (1.2831.45V) DD DDQ Timing cycle time Backward compatible to V = V = 1.5V 0.075V DD DDQ 1.07ns CL = 13 (DDR3-1866) -107 Supports DDR3L devices to be backward com- Product certification patible in 1.5V applications Automotive A Differential bidirectional data strobe Operating temperature 8n-bit prefetch architecture Industrial (40C T +95C) IT C Differential clock inputs (CK, CK ) Automotive (40C T +105C) AT C 8 internal banks 3 Ultra-high (40C T +125C) UT C Nominal and dynamic on-die termination (ODT) Revision :P for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Note: Programmable posted CAS additive latency (AL) Programmable CAS (WRITE) latency (CWL) 1. Not all options listed can be combined to de- Fixed burst length (BL) of 8 and burst chop (BC) of 4 fine an offered product. Use the part catalog (via the mode register set MRS ) search on 4Gb: x8, x16 Automotive DDR3L SDRAM Description Table 2: Addressing Parameter 512 Meg x 8 256 Meg x 16 Configuration 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K Row address 64K (A 15:0 ) 32K (A 14:0 ) Bank address 8 (BA 2:0 ) 8 (BA 2:0 ) Column address 1K (A 9:0 ) 1K (A 9:0 ) Page size 1KB 2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K512M8DA-107AAT:P - : MT41K Configuration Package Speed Revision :P Revision Configuration Mark 512 Meg x 8 512M8 256 Meg x 16 256M16 Temperature Mark Industrial temperature IT Package Mark Automotive temperature AT 78-ball FBGA, 8mm x 10.5mm DA Ultra-high temperature UT 96-ball FBGA, 8mm x 14mm TW Speed Grade Mark Certification Mark t CK = 1.07ns, CL = 13 107 Automotive A Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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