X-On Electronics has gained recognition as a prominent supplier of MT41K64M16TW-107 AAT:J DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K64M16TW-107 AAT:J DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K64M16TW-107 AAT:J Micron

MT41K64M16TW-107 AAT:J electronic component of Micron
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Part No.MT41K64M16TW-107 AAT:J
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin F-BGA
Datasheet: MT41K64M16TW-107 AAT:J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.724 ea
Line Total: USD 4.72 
Availability - 1746
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 6.8315
30 : USD 6.4675

1746
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 4.724
10 : USD 4.0656
100 : USD 3.9155
250 : USD 3.8461
500 : USD 3.7653
1000 : USD 3.6382
2448 : USD 3.3726
4896 : USD 3.3726
11016 : USD 3.3495

   
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We are delighted to provide the MT41K64M16TW-107 AAT:J from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K64M16TW-107 AAT:J and other electronic components in the DRAM category and beyond.

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1Gb: x8, x16 Automotive DDR3L SDRAM Addendum Description Addendum Automotive DDR3L SDRAM MT41K128M8 16 Meg x 8 x 8 banks MT41K64M16 8 Meg x 16 x 8 banks Write leveling Description Multipurpose register This addendum provides information to add Automo- Output driver calibration tive Ultra-high Temperature (AUT) option for the data AEC-Q100 sheet. This addendum does not provide detailed infor- PPAP submission mation about the device. Refer to the data sheet (1Gb: 8D response time x8, x16 Automotive DDR3L SDRAM, Rev. B 2/15 EN) for a complete description of device functionality, op- 1 Options Marking erating modes, and specifications for the same Micron Configuration part number products. The 1.35V DDR3L SDRAM de- 128 Meg x 8 128M8 vice is a low-voltage version of the 1.5V DDR3 SDRAM 64 Meg x 16 64M16 device. Refer to the DDR3 (1.5V) SDRAM data sheet FBGA package (Pb-free) x8 specifications when running in 1.5V compatible 78-ball FBGA (8mm x 10.5mm) DA mode. FBGA package (Pb-free) x16 96-ball FBGA (8mm x 14mm) TW Features Timing cycle time V = V = 1.35V (1.283V to 1.45V) DD DDQ 1.07ns CL = 13 (DDR3-1866) -107 Backward compatible to V = V = 1.5V 0.075V DD DDQ Product certification Differential bidirectional data strobe Automotive A 8n-bit prefetch architecture Operating temperature Differential clock inputs (CK, CK ) Industrial (40C T +95C) IT C 8 internal banks Automotive (40C T +105C) AT C Nominal and dynamic on-die termination (ODT) 3 Ultra-high (40C T +125C) UT C for data, strobe, and mask signals Revision :J Programmable CAS (READ) latency (CL) Programmable CAS additive latency (AL) 1. Not all options listed can be combined to Notes: Programmable CAS (WRITE) latency (CWL) define an offered product. Use the part Fixed burst length (BL) of 8 and burst chop (BC) of 4 catalog search on 1Gb: x8, x16 Automotive DDR3L SDRAM Addendum Description Table 2: Addressing Parameter 128 Meg x 8 64 Meg x 16 Configuration 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K Row address 16K A 13:0 8K A 12:0 Bank address 8 BA 2:0 8 BA 2:0 Column address 1K A 9:0 1K A 9:0 Page Size 1KB 2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K64M16DA-107AAT:J - : MT41K Configuration Package Speed Revision :J Revision Configuration Mark 128 Meg x 8 128M8 64 Meg x 16 64M16 Temperature Mark Industrial temperature IT Package Mark Automotive temperature AT 78-ball FBGA, 8mm x 10.5mm DA Ultra-high temperature UT 96-ball FBGA, 8mm x 14mm TW Certification Mark Speed Grade Mark t Automotive CK = 1.07ns, CL = 13 107 A Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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