X-On Electronics has gained recognition as a prominent supplier of MT44K64M18RB-083F:A DRAM across the USA, India, Europe, Australia, and various other global locations. MT44K64M18RB-083F:A DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT44K64M18RB-083F:A Micron

MT44K64M18RB-083F:A electronic component of Micron
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Part No.MT44K64M18RB-083F:A
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip RLDRAM3 1.125G-Bit 64Mx18 1.35V 168-Pin BGA
Datasheet: MT44K64M18RB-083F:A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1190: USD 91.8201 ea
Line Total: USD 109265.92 
Availability - 0
MOQ: 1190  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1190
Multiples : 1
1190 : USD 91.8201
1200 : USD 86.9057
2400 : USD 84.4227
6000 : USD 82.5605
12000 : USD 79.4567

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1190
Multiples : 1190
1190 : USD 88.627
2380 : USD 88.616

   
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We are delighted to provide the MT44K64M18RB-083F:A from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT44K64M18RB-083F:A and other electronic components in the DRAM category and beyond.

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1.125Gb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K64M18 4 Meg x 18 x 16 Banks MT44K32M36 2 Meg x 36 x 16 Banks 1 Options Marking Features t Clock cycle and RC timing 1200 MHz DDR operation (2400 Mb/s/ball data t 0.83ns and RC (MIN) = 6.67ns -083F rate) (RL3-2400) 86.4Gb/s peak bandwidth (x36 at 1200 MHz clock t 0.83ns and RC (MIN) = 7.5ns -083E frequency) (RL3-2400) Organization t 0.93ns and RC (MIN) = 7.5ns -093F 64 Meg x 18, and 32 Meg x 36 common I/O (CIO) (RL3-2133) 16 banks t 0.93ns and RC (MIN) = 8ns -093E 1.2V center-terminated push/pull I/O (RL3-2133) 2.5V V , 1.35V V , 1.2V V (optional 1.35V t EXT DD DDQ 1.07ns and RC (MIN) = 8ns -107E V for 2400 operation only). DDQ (RL3-1866) t Reduced cycle time ( RC (MIN) = 6.67 - 8ns) Configuration SDR addressing 64 Meg x 18 64M18 Programmable READ/WRITE latency (RL/WL) and 32 Meg x 36 32M36 burst length Operating temperature Data mask for WRITE commands Commercial (T = 0 to +95C) None C Differential input clocks (CK, CK ) Industrial (T = 40C to +95C) IT C Free-running differential input data clocks (DKx, Package DKx ) and output data clocks (QKx, QKx ) 168-ball BGA (Pb-free) RB On-die DLL generates CK edge-aligned data and Revision :A differential output data clock signals 1. Not all options listed can be combined to Note: 64ms refresh (128K refresh per 64ms) define an offered product. Use the part cat- 168-ball BGA package alog search on www.micron.com for availa- or 60 matched impedance outputs ble offerings. Integrated on-die termination (ODT) Single or multibank writes Extended operating range (2001200 MHz) READ training register Multiplexed and non-multiplexed addressing capa- bilities Mirror function Output driver and ODT calibration JTAG interface (IEEE 1149.1-2001) PDF: 09005aef85a88362 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 1.125Gb rldram3.pdf Rev. E 1/19 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1.125Gb: x18, x36 RLDRAM 3 Features Figure 1: 1Gb RLDRAM 3 Part Numbers Example Part Number: MT44K32M36RB-093E:A -: MT44K Configuration Package Speed Temp Rev Revision Die Rev :A Configuration 64 Meg x 18 64M18 Temperature 32 Meg x 36 32M36 None Commercial IT Industrial Package Speed Grade 168-ball BGA (Pb-free) RB t t -083F CK = 0.83ns (6.67ns RC) t t -083E CK = 0.83ns (7.5ns RC) t t -093F CK = 0.93ns (7.5ns RC) t t -093E CK = 0.93ns (8ns RC) t t -107E CK = 1.07ns (8ns RC) BGA Part Marking Decoder Due to space limitations, BGA-packaged components have an abbreviated part marking that is different from the part number. Microns BGA Part Marking Decoder is available on Microns Web site at www.micron.com. PDF: 09005aef85a88362 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 1.125Gb rldram3.pdf Rev. E 1/19 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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