512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF 8 Meg x 16 x 4 Banks MT48H16M32LF/LG 4 Meg x 32 x 4 Banks Options Marking Features V /V : 1.8V/1.8V H DD DDQ V /V = 1.71.95V DD DDQ Addressing Fully synchronous all signals registered on positive Standard addressing option LF edge of system clock 1 Reduced page size option LG Internal, pipelined operation column address can Configuration be changed every clock cycle 32 Meg x 16 (8 Meg x 16 x 4 32M16 Four internal banks for concurrent operation banks) Programmable burst lengths: 1, 2, 4, 8, and continu- 16 Meg x 32 (4 Meg x 32 x 4 16M32 ous banks) Auto precharge, includes concurrent auto precharge Plastic green packages Auto refresh and self refresh modes 2 54-ball VFBGA (8mm x 8mm) B4 LVTTL-compatible inputs and outputs 3 90-ball VFBGA (8mm x 13mm) B5 On-chip temperature sensor to control self refresh Timing cycle time rate 6ns at CL = 3 -6 Partial-array self refresh (PASR) 7.5ns at CL = 3 -75 Deep power-down (DPD) Power Selectable output drive strength (DS) Standard I /I None DD2 DD7 64ms refresh period 32ms for automotive tempera- 1 Low-power I /I L DD2 DD7 ture Automotive certification Package-level burn-in A Operating temperature range Industrial (40C to +85C) IT Automotive (40C to +105C) AT Revision :C 1. Contact factory for availability. Notes: 2. Available only for x16 configuration. 3. Available only for x32 configuration. Table 1: Configuration Addressing 16 Meg x 32 Reduced 1 Architecture 32 Meg x 16 16 Meg x 32 Page Size Option Number of banks 4 4 4 Bank address balls BA0, BA1 BA0, BA1 BA0, BA1 Row address balls A 12:0 A 12:0 A 13:0 Column address balls A 9:0 A 8:0 A 7:0 1. Contact factory for availability. Note: 09005aef8511d87c Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 512mb mobile sdram y67m ait aat.pdf Rev. C 06/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Table 2: Key Timing Parameters Clock Rate (MHz) Access Time Speed Grade CL = 2 CL = 3 CL = 2 CL = 3 -6 104 166 8ns 5ns -75 104 133 8ns 5.4ns Note: 1. CL = CAS (READ) latency. Figure 1: 512Mb LPSDR Part Numbering MT 48 H 16M32 LF B5 -6 A AT :C Design Revision Micron Technology :C = Device generation Product Family Operating Temperature 48 = Mobile LPSDR SDRAM IT = Industrial (40C to +85C) AT = Automotive (40C to +105C) Operating Voltage H = 1.8V/1.8V Automotive Certification A = Package-level burn-in Configuration Low Power 32M16 = 32 Meg x 16 Blank = Standard I /I DD2 DD7 16M32 = 16 Meg x 32 L = Low-power I /I DD2 DD7 Addressing Cycle Time t LF = Standard addressing -6 = 6ns, CK CL = 3 t -75 = 7.5ns, LG = Reduced page size CK CL = 3 Package Codes B4 = 8mm x 8mm, VFBGA, green B5 = 8mm x 13mm, VFBGA, green FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. 09005aef8511d87c Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 512mb mobile sdram y67m ait aat.pdf Rev. C 06/18 EN 2013 Micron Technology, Inc. All rights reserved.