3V, 256Mb: Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q256A13E1240x, N25Q256A13EF840x, N25Q256A13ESF40x
N25Q256A83ESF40x, N25Q256A83E1240x, N25Q256A13EF8A0x,
N25Q256A13ESFA0x, N25Q256A13ESFH0x, N25Q256A13E12A0x
Write protection
Features
Software write protection applicable to every
SPI-compatible serial bus interface
64KB sector via volatile lock bit
Double transfer rate (DTR) mode
Hardware write protection: protected area size
2.73.6V single supply voltage
defined by five nonvolatile bits (BP0, BP1, BP2,
108 MHz (MAX) clock frequency supported for all
BP3, and TB)
protocols in single transfer rate (STR) mode
Additional smart protections, available upon re-
54 MHz (MAX) clock frequency supported for all
quest
protocols in DTR mode
Electronic signature
Dual/quad I/O instruction provides increased
JEDEC-standard 2-byte signature (BA19h)
throughput up to 54 MB/s
Unique ID of 17 read-only bytes including: addi-
Supported protocols
tional extended device ID (EDID) to identify de-
Extended SPI, dual I/O, and quad I/O
vice factory options; customized factory data
DTR mode supported on all
Minimum 100,000 ERASE cycles per sector
Execute-in-place (XIP) mode for all three protocols
More than 20 years data retention
Configurable via volatile or nonvolatile registers
Packages JEDEC standard, all RoHS compliant
Enables memory to work in XIP mode directly af-
V-PDFN-8/8mm x 6mm (also known as SON,
ter power-on
DFPN, MLP, MLF)
PROGRAM/ERASE SUSPEND operations
SOP2-16/300mils (also known as SO16W, SO16-
Continuous read of entire memory via a single com-
Wide, SOIC-16)
mand
T-PBGA-24b05/6mm x 8mm (also known as
Fast read
TBGA24)
Quad or dual output fast read
Quad or dual I/O fast read
Flexible to fit application
Configurable number of dummy cycles
Output buffer configurable
Software reset
3-byte and 4-byte addressability mode supported
64-byte, user-lockable, one-time programmable
(OTP) dedicated area
An additional reset pin is available on the following
devices
N25Q256A83ESF40x, N25Q256A83E1240x
Erase capability
Subsector erase 4KB uniform granularity blocks
Sector erase 64KB uniform granularity blocks
Full-chip erase
PDF: 09005aef84566603 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
n25q_256mb_65nm.pdf - Rev. O 12/12 EN 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.3V, 256Mb: Multiple I/O Serial Flash Memory
Features
Contents
Device Description ........................................................................................................................................... 6
Features ....................................................................................................................................................... 6
3-Byte Address and 4-Byte Address Modes ..................................................................................................... 6
Operating Protocols ...................................................................................................................................... 6
XIP Mode ..................................................................................................................................................... 6
Device Configurability .................................................................................................................................. 7
Signal Assignments ........................................................................................................................................... 8
Signal Descriptions ......................................................................................................................................... 10
Memory Organization .................................................................................................................................... 12
Memory Configuration and Block Diagram .................................................................................................. 12
Memory Map 256Mb Density ....................................................................................................................... 13
Device Protection ........................................................................................................................................... 14
Serial Peripheral Interface Modes .................................................................................................................... 17
SPI Protocols .................................................................................................................................................. 19
Nonvolatile and Volatile Registers ................................................................................................................... 20
Status Register ............................................................................................................................................ 21
Nonvolatile and Volatile Configuration Registers .......................................................................................... 22
Extended Address Register .......................................................................................................................... 25
Enhanced Volatile Configuration Register .................................................................................................... 26
Flag Status Register ..................................................................................................................................... 26
Command Definitions .................................................................................................................................... 28
READ REGISTER and WRITE REGISTER Operations ........................................................................................ 32
READ STATUS REGISTER or FLAG STATUS REGISTER Command ................................................................ 32
READ NONVOLATILE CONFIGURATION REGISTER Command ................................................................... 32
READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command .................................. 33
READ EXTENDED ADDRESS REGISTER Command ..................................................................................... 33
WRITE STATUS REGISTER Command ......................................................................................................... 33
WRITE NONVOLATILE CONFIGURATION REGISTER Command ................................................................. 34
WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command ................................. 34
WRITE EXTENDED ADDRESS REGISTER Command ................................................................................... 35
READ LOCK REGISTER Command .............................................................................................................. 35
WRITE LOCK REGISTER Command ............................................................................................................ 36
CLEAR FLAG STATUS REGISTER Command ................................................................................................ 37
READ IDENTIFICATION Operations ............................................................................................................... 38
READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 38
READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 39
READ MEMORY Operations ............................................................................................................................ 43
3-Byte Address ........................................................................................................................................... 43
4-Byte Address ........................................................................................................................................... 45
READ MEMORY Operations Timing Single Transfer Rate ........................................................................... 46
READ MEMORY Operations Timing Double Transfer Rate ......................................................................... 49
PROGRAM Operations .................................................................................................................................... 52
WRITE Operations .......................................................................................................................................... 57
WRITE ENABLE Command ......................................................................................................................... 57
WRITE DISABLE Command ........................................................................................................................ 57
ERASE Operations .......................................................................................................................................... 59
SUBSECTOR ERASE Command ................................................................................................................... 59
SECTOR ERASE Command ......................................................................................................................... 59
BULK ERASE Command ............................................................................................................................. 60
PROGRAM/ERASE SUSPEND Command ..................................................................................................... 61
PDF: 09005aef84566603 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
n25q_256mb_65nm.pdf - Rev. O 12/12 EN 2011 Micron Technology, Inc. All rights reserved.