X-On Electronics has gained recognition as a prominent supplier of NAND01GW3B2CN6E NAND Flash across the USA, India, Europe, Australia, and various other global locations. NAND01GW3B2CN6E NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

NAND01GW3B2CN6E Micron

NAND01GW3B2CN6E electronic component of Micron
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Part No.NAND01GW3B2CN6E
Manufacturer: Micron
Category: NAND Flash
Description: FLASH, NAND, 1GBIT, TSOP48
Datasheet: NAND01GW3B2CN6E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.2277 ea
Line Total: USD 8.23 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 8.2277
10 : USD 7.7226
100 : USD 6.4196
250 : USD 5.7901
500 : USD 5.0581

   
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We are delighted to provide the NAND01GW3B2CN6E from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NAND01GW3B2CN6E and other electronic components in the NAND Flash category and beyond.

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NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features High density NAND flash memories Up to 2 Gbits of memory array Cost effective solutions for mass storage applications NAND interface x8 or x16 bus width TSOP48 12 x 20 mm Multiplexed address/ data Pinout compatibility for all densities FBGA Supply voltage: 1.8 V/3.0 V Page size VFBGA63 9.5 x 12 x 1 mm x8 device: (2048 + 64 spare) bytes VFBGA63 9 x 11 x 1 mm x16 device: (1024 + 32 spare) words Serial number option Block size Data protection x8 device: (128 K + 4 K spare) bytes Hardware block locking x16 device: (64 K + 2 K spare) words Hardware program/erase locked during Page read/program power transitions Random access: 25 s (max) Data integrity Sequential access: 30 ns (min) 100 000 program/erase cycles per block Page program time: 200 s (typ) (with ECC) Copy back program mode 10 years data retention Cache program and cache read modes ECOPACK packages Fast block erase: 2 ms (typ) Development tools Status register Error correction code models Electronic signature Bad blocks management and wear leveling algorithms Chip enable dont care Hardware simulation models Table 1. Device summary Reference Part number NAND01GR3B2B, NAND01GW3B2B NAND01G-B2B (1) NAND01GR4B2B, NAND01GW4B2B NAND02GR3B2C, NAND02GW3B2C NAND02G-B2C (1) NAND02GR4B2C, NAND02GW4B2C 1. x16 organization only available for MCP products. April 2008 Rev 5 1/60 www.numonyx.com 1Contents NAND01G-B2B, NAND02G-B2C Contents 1 Description . 7 2 Memory array organization 12 2.1 Bad blocks 12 3 Signals description . 14 3.1 Inputs/outputs (I/O0-I/O7) . 14 3.2 Inputs/outputs (I/O8-I/O15) 14 3.3 Address Latch Enable (AL) . 14 3.4 Command Latch Enable (CL) 14 3.5 Chip Enable (E) 14 3.6 Read Enable (R) 14 3.7 Write Enable (W) . 15 3.8 Write Protect (WP) 15 3.9 Ready/Busy (RB) . 15 3.10 V supply voltage 15 DD 3.11 V ground 15 SS 4 Bus operations 16 4.1 Command input 16 4.2 Address input 16 4.3 Data input . 16 4.4 Data output 16 4.5 Write Protect 17 4.6 Standby 17 5 Command set 19 6 Device operations 20 6.1 Read memory array . 20 6.1.1 Random read . 20 6.1.2 Page read . 20 2/60

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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