X-On Electronics has gained recognition as a prominent supplier of MEM2307M3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. MEM2307M3G MOSFETs are a product manufactured by Micro One. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MEM2307M3G Micro One

Name: MEM2307M3G
Brand: Micro One
SKU: MEM2307M3G_Micro One
Availability: OutOfStock
Rating: 5 (11 reviews)

MEM2307M3G electronic component of Micro One

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See Product Specifications

Part No.	MEM2307M3G
Manufacturer:	Micro One
Category:	MOSFETs
Description:	MOSFET P Channel 30V 4.1A 2V @ 250uA 88mO @ 4.1A,10V SOT23-3 RoHS
Datasheet:	MEM2307M3G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0902 ea
Line Total: USD 0.45

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

MEM2307M3G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 14 Jan to Fri. 17 Jan MOQ : 5 Multiples : 5	5 : USD 0.0902 50 : USD 0.073 150 : USD 0.0645 500 : USD 0.0582 3000 : USD 0.0531 6000 : USD 0.0503

Specifications

Manufacturer Micro One Micro One
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT23 - 3 SOT23 - 3
Brand Category Micro One Micro One
Fet Type PChannel PChannel
Drain To Source Voltagevdss 30 V 30 V
Continuous Drain Current Id @ 25°C 4.1 A 4.1 A
Vgsth Max @ Id 2V @ 250uA 2V @ 250uA
Rds On Max @ Id Vgs 88mO @ 4.1A,10V 88mO @ 4.1A,10V
Power Dissipation-Max Ta 25°C 1.4 W 1.4 W
Drain Source Voltage Vdss 30 V 30 V
Continuous Drain Current Id 4.1 A 4.1 A
Power Dissipation Pd 1.4 W 1.4 W
Drain Source On Resistance Rdson@Vgs Id 88 mOhms @10V , 4.1A 88 mOhms @10V , 4.1A
Gate Threshold Voltage Vgsth@Id 2 V @250uA 2 V @250uA
Type P Channel P Channel

We are delighted to provide the MEM2307M3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MEM2307M3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The MEM2307M3G is a MOSFET-based P Channel 30V 4.1A 2V @ 250uA 88mO @ 4.1A, 10V SOT23-3 RoHS manufactured by Micro One. It is a three-terminal, extreme low-Voltage field effect transistor that can be used for switching in low voltage applications such as battery-driven circuits and consumer electronic equipment. The device consists of an insulated gate, source and drain that are connected together in SOT-23 package through leads that can be soldered onto the circuit for easy assembly. It has an impressive power dissipation capability up to 4.1A at 10V and can withstand maximum voltage limits up to 30V. Moreover, it comes with impressive performance characteristics such as an extremely low gate charge of 250uA and an 88mOhm drain-source ON resistance at 4.1A, 10V. This device is RoHS compliant and is digitally enhanced for use in automotive and consumer electronics industry.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

MICRONE(Nanjing Micro One Elec) may also be referenced as

Nanjing Micro One Elec

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