X-On Electronics has gained recognition as a prominent supplier of MEM2303M3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. MEM2303M3G MOSFETs are a product manufactured by Micro One. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MEM2303M3G Micro One

Name: MEM2303M3G
Brand: Micro One
SKU: MEM2303M3G_Micro_One
Availability: InStock
Rating: 5 (11 reviews)

MEM2303M3G electronic component of Micro One

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See Product Specifications

Part No.	MEM2303M3G
Manufacturer:	Micro One
Category:	MOSFETs
Description:	MOSFET P Channel 30V 4.2A 1.3V @ 250uA 58mO @ 4.2A,10V SOT23-3 RoHS
Datasheet:	MEM2303M3G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0844 ea
Line Total: USD 0.84

Availability - 630
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 10 Multiples: 10
Pack Size: 10

MEM2303M3G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

630

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 10
Multiples : 10

10 : USD 0.0844
100 : USD 0.0677
300 : USD 0.0509
3000 : USD 0.0397
6000 : USD 0.0357
9000 : USD 0.0339

Specifications

Manufacturer

Micro One Micro One

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Micro One Micro One

Fet Type

PChannel PChannel

Drain To Source Voltagevdss

30 V 30 V

Continuous Drain Current Id @ 25°C

4.2 A 4.2 A

Vgsth Max @ Id

1.3V @ 250uA 1.3V @ 250uA

Rds On Max @ Id Vgs

58mO @ 4.2A,10V 58mO @ 4.2A,10V

Power Dissipation-Max Ta 25°C

1.4 W 1.4 W

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

4.2 A 4.2 A

Drain Source On Resistance Rdson@Vgs Id

58 mOhms @10V , 4.2A 58 mOhms @10V , 4.2A

Power Dissipation Pd

1.4 W 1.4 W

Gate Threshold Voltage Vgsth@Id

1.3 V @250uA 1.3 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

MEM2303M3G Alternative Parts

We are delighted to provide the MEM2303M3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MEM2303M3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TechnologyThe MEM2303M3G is an P Channel MOSFET with a 30V drain-gate voltage, 4.2A continuous current, and 1.3V drain-gate threshold voltage. It is rated at a maximum of 250uA gate-source leakage current, 58mO on-resistance at 4.2A, and 10V drain-avalanche voltage. It is housed in a SOT23-3 package that is compliant with RoHS standards and is manufactured by Micro One Technology.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
630 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 10 Multiples : 10	10 : USD 0.0844 100 : USD 0.0677 300 : USD 0.0509 3000 : USD 0.0397 6000 : USD 0.0357 9000 : USD 0.0339

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