X-On Electronics has gained recognition as a prominent supplier of 1N65G-AA3-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. 1N65G-AA3-R MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

1N65G-AA3-R Unisonic

Name: 1N65G-AA3-R
Brand: Unisonic
SKU: 1N65GAA3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

1N65G-AA3-R electronic component of Unisonic

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Part No.	1N65G-AA3-R
Manufacturer:	Unisonic
Category:	MOSFETs
Description:	MOSFET N Channel 650V 1.2A(Tc) 4V @ 250uA 12.5O @ 600mA,10V SOT-223 RoHS
Datasheet:	1N65G-AA3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1827 ea
Line Total: USD 0.91

Availability - 2798
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 5 Multiples: 5
Pack Size: 5

1N65G-AA3-R More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2798

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 5
Multiples : 5

5 : USD 0.1827
50 : USD 0.1444
150 : USD 0.1072
500 : USD 0.0853
2500 : USD 0.0766
5000 : USD 0.072

Specifications

Manufacturer

Unisonic Unisonic

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 223 SOT - 223

Brand Category

Unisonic Unisonic

Fet Type

NChannel NChannel

Drain To Source Voltagevdss

650 V 650 V

Continuous Drain Current Id @ 25°C

1.2 A (T C) 1.2 A (T C)

Vgsth Max @ Id

4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs

12.5O @ 600mA,10V 12.5O @ 600mA,10V

Power Dissipation-Max Ta 25°C

8 W (Tc) 8 W (Tc)

Drain Source Voltage Vdss

650 V 650 V

Continuous Drain Current Id

1.2 A 1.2 A

Drain Source On Resistance Rdson@Vgs Id

12.5 Ohms @10V , 600mA 12.5 Ohms @10V , 600mA

Power Dissipation Pd

8 W 8 W

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

1N65G-AA3-R Alternative Parts

We are delighted to provide the 1N65G-AA3-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N65G-AA3-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The 1N65G-AA3-R is an N-channel MOSFET created by Unisonic. It is electrical parameters make it suitable for high voltage, low current loads. Its breakdown voltage is rated at 650V, capable of handling 1.2 amperes temperature at 25 degrees Celsius (Tc) The gate-source voltage is rated at 4V and a gate-source current of 250uA. The on-state resistance is rated at 12.5 Ohms with a maximum drain source current of 600 milliamperes. The package for this device is a small outline transistor (SOT-223) and it is compliant with the RoHS directive for hazardous substances.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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Availability	Price	Buy Price	Quantity
2798 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 5 Multiples : 5	5 : USD 0.1827 50 : USD 0.1444 150 : USD 0.1072 500 : USD 0.0853 2500 : USD 0.0766 5000 : USD 0.072

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