X-On Electronics has gained recognition as a prominent supplier of 2N5551G-B-AB3-R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5551G-B-AB3-R Bipolar Transistors - BJT are a product manufactured by Unisonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5551G-B-AB3-R Unisonic

Name: 2N5551G-B-AB3-R
Brand: Unisonic
SKU: 2N5551GBAB3R_Unisonic
Availability: OutOfStock
Rating: 5 (11 reviews)

2N5551G-B-AB3-R electronic component of Unisonic

2N5551G-B-AB3-R Bipolar Transistors - BJT

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See Product Specifications

Part No.	2N5551G-B-AB3-R
Manufacturer:	Unisonic
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 600mA 160V SOT-89 (SOT-89-3) RoHS
Datasheet:	2N5551G-B-AB3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.1178 ea
Line Total: USD 1.18

Availability - 0

MOQ: 10 Multiples: 10
Pack Size: 10

2N5551G-B-AB3-R More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 19 Mar to Mon. 24 Mar MOQ : 10 Multiples : 10	10 : USD 0.1178 100 : USD 0.0945 300 : USD 0.0709 1000 : USD 0.0571 4000 : USD 0.0474 8000 : USD 0.0448

Specifications

Manufacturer Unisonic Unisonic
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 89 (SOT - 89 - 3) SOT - 89 (SOT - 89 - 3)
Brand Category Unisonic Unisonic
Transistor Type npn npn
Current - Collector Ic Max 600 mA 600 mA
Voltage - Collector Emitter Breakdown Max 160 V 160 V
Power - Max 500 mW 500 mW
Collector Cut-Off Current Icbo 50 nA 50 nA
Collector-Emitter Breakdown Voltage Vceo 160 V 160 V
Power Dissipation Pd 500 mW 500 mW
Collector Current Ic 600 mA 600 mA
Dc Current Gain Hfe@Ic Vce 150@10 mA , 5V 150@10 mA , 5V
Transition Frequency Ft 100MHz 100MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the 2N5551G-B-AB3-R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5551G-B-AB3-R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

TechnologiesThe 2N5551G-B-AB3-R is an NPN (negative-positive-negative) transistor produced by Unisonic Technologies. It is a SOT-89-3 (Small Outline Transistor-89 three-leaded) component with RoHS (Restriction of Hazardous Substances) certification. It has a maximum current rating of 600 mA and a maximum voltage rating of 160V. It is suitable for use in switching and amplifier applications, and includes a range of features such as an integrated heat sink and an optimized package design for better thermal and mechanical performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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