X-On Electronics has gained recognition as a prominent supplier of MMBT9012G-I-AE3-R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT9012G-I-AE3-R Bipolar Transistors - BJT are a product manufactured by Unisonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT9012G-I-AE3-R Unisonic

Name: MMBT9012G-I-AE3-R
Brand: Unisonic
SKU: MMBT9012GIAE3R_Unisonic
Availability: OutOfStock
Rating: 5 (11 reviews)

MMBT9012G-I-AE3-R electronic component of Unisonic

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See Product Specifications

Part No.	MMBT9012G-I-AE3-R
Manufacturer:	Unisonic
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 500mA 40V SOT-23 (SOT-23-3) RoHS
Datasheet:	MMBT9012G-I-AE3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0287 ea
Line Total: USD 0.57

Availability - 0

MOQ: 20 Multiples: 20
Pack Size: 20

MMBT9012G-I-AE3-R More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 05 Dec to Tue. 10 Dec MOQ : 20 Multiples : 20	20 : USD 0.0287 200 : USD 0.0232 600 : USD 0.0202 3000 : USD 0.0183 9000 : USD 0.0169 21000 : USD 0.0159

Specifications

Manufacturer Unisonic Unisonic
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Unisonic Unisonic
Transistor Type pnp pnp
Current - Collector Ic Max 500 mA 500 mA
Voltage - Collector Emitter Breakdown Max 40 V 40 V
Power - Max 225 mW 225 mW
Collector Cut-Off Current Icbo 100 nA 100 nA
Collector-Emitter Breakdown Voltage Vceo 20 V 20 V
Power Dissipation Pd 225 mW 225 mW
Collector Current Ic 500 mA 500 mA
Dc Current Gain Hfe@Ic Vce 190@50 mA , 1V 190@50 mA , 1V
Transition Frequency Ft - -
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 180 mV @500 mA , 50 mA 180 mV @500 mA , 50 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the MMBT9012G-I-AE3-R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT9012G-I-AE3-R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

TechnologiesThe MMBT9012G-I-AE3-R is a surface-mount PNP transistor manufactured by Unisonic Technologies. It is housed in a SOT-23-3 package and is RoHS compliant. It has a maximum current rating of 500mA and a peak voltage rating of 40V. It is suitable for use in switching and amplifier circuits requiring low power dissipation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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