X-On Electronics has gained recognition as a prominent supplier of 5962-8764803XA EPROM across the USA, India, Europe, Australia, and various other global locations. 5962-8764803XA EPROM are a product manufactured by Micross. We provide cost-effective solutions for EPROM, ensuring timely deliveries around the world.

5962-8764803XA Micross

5962-8764803XA electronic component of Micross
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Part No.5962-8764803XA
Manufacturer: Micross
Category: EPROM
Description: EPROM UV 512K-Bit 64K x 8 250ns 28-Pin CDIP
Datasheet: 5962-8764803XA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the 5962-8764803XA from our EPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 5962-8764803XA and other electronic components in the EPROM category and beyond.

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UVEPROM SMJ27C512 512K UVEPROM PIN ASSIGNMENT UV Erasable Programmable (Top View) Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY A15 1 Vcc 28 SPECIFICATIONS A12 2 A14 27 SMD 5962-87648 A7 3 A13 26 A6 4 A8 25 MIL-STD-883 A5 5 A9 24 A4 6 A11 23 A3 7 G\/V 22 PP 8 A2 21 A10 9 A1 20 E\ FEATURES 10 A0 19 DQ7 Organized 65,536 x 8 11 18 DQ6 DQ0 12 17 High-reliability MIL-PRF-38535 processing DQ1 DQ5 13 16 DQ2 DQ4 Single +5V 10% power supply 14 15 DQ3 GND Pin-compatible with existing 512K read-only memories (ROMs) and electrically programmable ROMs (EPROMs) All inputs/outputs fully TTL compatible Power-saving CMOS technology Pin Name Function Very high-speed SNAP! Pulse Programming A0 - A15 Address Inputs 3-state output buffers DA0-DQ7 Inputs (programming)/Outputs 400mV minimum DC noise immunity with standard TTL loads E\ Chip Enable/Power Down Latchup immunity of 250mA on all input and output lines GND Ground Low power dissipation (CMOS input levels) G\ /V Output Enable/13V Programming PP Active - 193mW3 (MAX) V 5V Power Supply CC 3Standby - 1.7mW (MAX) OPTIONS MARKING GENERAL DESCRIPTION Timing The SMJ27C512 is a set of 65536 by 8-bit (524,288-bit), 150ns access -15 200ns access -20 ultraviolet (UV) light erasable, electrically programmable 250ns access -25 read-only memories. These devices are fabricated using power- saving CMOS technology for high speed and simple interface Package(s) with MOS and bipolar circuits. All inputs (including program Ceramic DIP (600mils) J No. 110 data inputs can be driven by Series 54 TTL circuits without the use of external pullup resistors. Each output can drive one Operating Temperature Ranges Series 54 TTL circuit without external resistors. The data out- o o Military (-55 C to +125 C) M puts are 3-state for connecting multiple devices to a common bus. The SMJ27C512 is pin-compatible with existing 28-pin 512K ROMs and EPROMs. Because this EPROM operates from a single 5V supply (in the read mode), it is ideal for use in microprocessor-based systems. One other supply (13V) is needed for programming. For more products and information All programming signals are TTL level. This device is pro- please visit our web site at grammable by the SNAP! Pulse programming algorithm. The www.micross.com SNAP! Pulse programming algorithm uses a V of 13V and PP a V of 6.5V for a nominal programming time of seven sec- CC onds. For programming outside the system, existing EPROM programmers can be used. Locations may be programmed singly, in blocks, or at random. Micross Components reserves the right to change products or speci cations without notice. SMJ27512 Rev. 1.2 01/10 1UVEPROM SMJ27C512 FUNCTIONAL BLOCK DIAGRAM* EPROM 65,536 x 8 10 0 A0 9 A1 8 A2 7 A3 6 A4 5 11 A5 A DQ0 4 12 A6 A DQ1 13 3 A7 A DQ2 25 15 A8 DQ3 A 0 24 16 A A9 A DQ4 65,535 21 17 A10 A DQ5 23 18 A11 A DQ6 2 19 A12 DQ7 A 26 A13 27 A14 1 15 A15 20 E\ [PWR DWN] & 22 EN G\ /V PP * This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. OPERATION The seven modes of operation for the SMJ27C512 are listed in Table 1. The read mode requires a single 5V supply. All inputs are TTL level except for V during programming (13V for SNAP! Pulse), and 12V on A9 for signature mode. PP TABLE 1. OPERATION MODES MODE* FUNCTION OUTPUT PROGRAM (PINS) READ STANDBY PROGRAMMING VERIFY SIGNATURE MODE DISABLE INHIBIT E\ (20) V V V V V V V IL IL IL IH IL IL IH X V G\ /V (22) V V V V V IL PP IL IH PP IL PP V V (28) V V V V V V CC CC CC CC CC CC CC CC A9 (24) X X X X X X V V ID ID A0 (10) X X X X X X V V IL IH CODE DQ0-DQ7 Data Out High-Z High-Z Data In Data Out High-Z MFG DEVICE (11-13, 15-19) 97h 85h * X can be V or V IL IH Micross Components reserves the right to change products or speci cations without notice. SMJ27512 Rev. 1.2 01/10 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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