UVEPROM
SMJ27C512
512K UVEPROM
PIN ASSIGNMENT
UV Erasable Programmable
(Top View)
Read-Only Memory
28-Pin DIP (J) 600-Mils
AVAILABLE AS MILITARY
A15 1 Vcc
28
SPECIFICATIONS
A12 2 A14
27
SMD 5962-87648 A7 3 A13
26
A6 4 A8
25
MIL-STD-883
A5 5 A9
24
A4 6 A11
23
A3 7 G\/V
22
PP
8
A2 21 A10
9
A1 20 E\
FEATURES
10
A0 19 DQ7
Organized 65,536 x 8
11
18 DQ6
DQ0
12 17
High-reliability MIL-PRF-38535 processing DQ1 DQ5
13 16
DQ2 DQ4
Single +5V 10% power supply
14 15
DQ3
GND
Pin-compatible with existing 512K read-only memories (ROMs)
and electrically programmable ROMs (EPROMs)
All inputs/outputs fully TTL compatible
Power-saving CMOS technology
Pin Name Function
Very high-speed SNAP! Pulse Programming
A0 - A15 Address Inputs
3-state output buffers
DA0-DQ7 Inputs (programming)/Outputs
400mV minimum DC noise immunity with standard TTL loads
E\ Chip Enable/Power Down
Latchup immunity of 250mA on all input and output lines GND Ground
Low power dissipation (CMOS input levels)
G\ /V Output Enable/13V Programming
PP
Active - 193mW3 (MAX)
V 5V Power Supply
CC
3Standby - 1.7mW (MAX)
OPTIONS MARKING
GENERAL DESCRIPTION
Timing
The SMJ27C512 is a set of 65536 by 8-bit (524,288-bit),
150ns access -15
200ns access -20 ultraviolet (UV) light erasable, electrically programmable
250ns access -25
read-only memories. These devices are fabricated using power-
saving CMOS technology for high speed and simple interface
Package(s)
with MOS and bipolar circuits. All inputs (including program
Ceramic DIP (600mils) J No. 110
data inputs can be driven by Series 54 TTL circuits without
the use of external pullup resistors. Each output can drive one
Operating Temperature Ranges
Series 54 TTL circuit without external resistors. The data out-
o o
Military (-55 C to +125 C) M
puts are 3-state for connecting multiple devices to a common
bus. The SMJ27C512 is pin-compatible with existing 28-pin
512K ROMs and EPROMs.
Because this EPROM operates from a single 5V supply
(in the read mode), it is ideal for use in microprocessor-based
systems. One other supply (13V) is needed for programming.
For more products and information
All programming signals are TTL level. This device is pro-
please visit our web site at
grammable by the SNAP! Pulse programming algorithm. The
www.micross.com
SNAP! Pulse programming algorithm uses a V of 13V and
PP
a V of 6.5V for a nominal programming time of seven sec-
CC
onds. For programming outside the system, existing EPROM
programmers can be used. Locations may be programmed
singly, in blocks, or at random.
Micross Components reserves the right to change products or speci cations without notice.
SMJ27512
Rev. 1.2 01/10
1UVEPROM
SMJ27C512
FUNCTIONAL BLOCK DIAGRAM*
EPROM 65,536 x 8
10
0
A0
9
A1
8
A2
7
A3
6
A4
5
11
A5 A DQ0
4 12
A6 A DQ1
13
3
A7 A DQ2
25 15
A8 DQ3
A
0
24 16
A
A9 A DQ4
65,535
21
17
A10 A DQ5
23 18
A11 A DQ6
2 19
A12 DQ7
A
26
A13
27
A14
1
15
A15
20
E\
[PWR DWN]
&
22
EN
G\ /V
PP
* This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
OPERATION
The seven modes of operation for the SMJ27C512 are listed in Table 1. The read mode requires a single 5V supply. All
inputs are TTL level except for V during programming (13V for SNAP! Pulse), and 12V on A9 for signature mode.
PP
TABLE 1. OPERATION MODES
MODE*
FUNCTION
OUTPUT PROGRAM
(PINS) READ STANDBY PROGRAMMING VERIFY SIGNATURE MODE
DISABLE INHIBIT
E\ (20) V
V V V V V V
IL
IL IL IH IL IL IH
X V
G\ /V (22) V V V V V
IL
PP IL IH PP IL PP
V
V (28) V V V V V V
CC
CC CC CC CC CC CC CC
A9 (24) X X X X X X V V
ID ID
A0 (10) X X X X X X V V
IL IH
CODE
DQ0-DQ7
Data Out High-Z High-Z Data In Data Out High-Z
MFG DEVICE
(11-13, 15-19)
97h 85h
* X can be V or V
IL IH
Micross Components reserves the right to change products or speci cations without notice.
SMJ27512
Rev. 1.2 01/10
2