LOW NOISE E-PHEMT PMA-5451+ Monolithic Amplifier 50 0.05 to 6 GHz THE BIG DEAL y Single Positive Supply Voltage, 3V, Id=30mA y Ultra Low Noise Figure, 0.6 dB typ. at 0.5GHz y High IP3, 29 dBm typ. 1GHz y Gain, 19dB typ. at 1 GHz y Output Power, up to +17dBm typ. Generic photo used for illustration purposes only y Micro-miniature size - 3mm x 3mm CASE STYLE: DQ849 y Aqueous washable +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y Cellular y ISM y GSM y WCDMA y LTE y WiMAX y WLAN y UNII and HIPERLAN PRODUCT OVERVIEW Mini-Circuits PMA-5451+ is a E-PHEMT* based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a single 3V supply at only 30mA and is internally matched to 50 Ohms. KEY FEATURES Feature Advantages Ultra Low Noise,0.6 dB Outstanding Noise Figure, measured in a 50 Ohm environment without any external matching Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise High IP3, 29 dBm Receiver Front End (RFE) because it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone spur- free dynamic range At only 30mA, the PMA-5451+ is ideal for remote applications with limited available power or densely packed applications Low Current, 30mA where thermal management is critical. Broad Band Operating over a broadband the PMA-5451+ covers the primary wireless communications bands: Cellular, PCS, LTE, WiMAX Internally Matched No external matching elements required to achieve the advertised noise and output power over the full band MCLP Package Low Inductance, repeatable transitions, excellent thermal pad Max Input Power, +20dBm Ruggedized design operates up to input powers of +20dBm without the need of an external limiter Low, small signal operating current of 30 mA nominal maintains junction temperatures typically below 100C at 85C ground High Reliability lead temperature *Enhancement mode Pseudomorphic High Electron Mobility Transistor. REV. D ECO-010881 PMA-5451+ TH/RS/CP/AM 211130 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 1 OF 5LOW NOISE E-PHEMT PMA-5451+ Monolithic Amplifier (1) ELECTRICAL SPECIFICATIONS AT 25C, ZO=50, (REFER TO CHARACTERIZATION CIRCUIT, FIG. 1) Parameter Condition (GHz) Min. Typ. Max. Units Frequency Range 0.05 6.0 GHz DC Voltage (V ) 3.0 V d (6) DC Current (I ) 20 30 40 mA d DC Current (I ) 1.6 mA Rbias 0.05 1.3 0.5 0.6 1.0 0.8 2.0 1.0 1.3 Noise Figure dB 3.0 1.3 4.0 1.5 5.0 2.0 6.0 2.3 0.05 24.2 0.5 22.1 1.0 18.6 2.0 12.3 13.7 15.1 Gain dB 3.0 10.6 4.0 8.5 5.0 6.7 6.0 5.3 0.05-0.5 8.8 Input Return Loss dB 0.5-6 6.5 0.05-0.1 14.0 Output Return Loss dB 0.1-6 19.0 0.05 27.3 0.5 27.9 1.0 29.0 2.0 30.8 (2) Output Power 1 dB compression dB 3.0 31.4 4.0 30.8 5.0 31.8 6.0 32.2 (3) DC Current Variation vs. Temperature -0.030 mA/C Thermal Resistance 128 C/W (4) MAXIMUM RATINGS (1) Measured on Mini-Circuits Characterization test board TB-502+ Parameter Ratings See Characterization Test Circuit (Fig. 1) (2) P1dB specified with external current limiting of 40mA (5) Operating Temperature -40C to 85C Capable of higher P1dB at higher current (see Fig.2) (3) (Current at 85C - Current at -45C)/130 Storage Temperature -55C to 100C (4) Permanent damage may occur if any of these limits are exceeded. These maximum ratings are not intended for continuous normal operation. Channel Temperature 150C (5) Defined with reference to ground pad temperature. (Pad 6) DC Voltage 5V (6) Specified DC current consumption is under small signal conditions. Current will increase with input RF Power. To maintain maximum current consumption, Power Dissipation 500mW external DC current limiting circuits are required on Vd line. (7) Maximum input power is specified based upon external Vd current limiting of 60mA. (Pad 6) DC Current 80mA Maximum input power will degrade without external current limiting. (Pad 7) Bias Current 10mA *Enhancement mode Pseudomorphic High Electron Mobility Transistor. (7) Input Power 20dBm 5.Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 2 OF 5