CM200DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD U-Series Module 200 Amperes/1200 Volts A D F T - (4 TYP.) H G2 E2 C L J B E E1 CM G1 H U C2E1 E2 C1 G S - NUTS Q Q P N (3 TYP) Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists K K K R of two IGBT Transistors in a half- M bridge configuration with each tran- sistor having a reverse-connected C L super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 Features: E2 h Low Drive Power C2E1 h Low V CE(sat) E2 C1 h Discrete Super-Fast Recovery Free-Wheel Diode E1 G1 h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control Outline Drawing and Circuit Diagram h Motion/Servo Control h UPS Dimensions Inches Millimeters Dimensions Inches Millimeters h Welding Power Supplies A 4.25 108.0 L 0.87 22.0 h Laser Power Supplies B 2.44 62.0 M 0.33 8.5 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 N 0.10 2.5 Ordering Information: Example: Select the complete D 3.660.01 93.00.25 P 0.85 21.5 module number you desire from E 1.880.01 48.00.25 Q 0.98 25.0 the table - i.e. CM200DU-24H is a F 0.67 17.0 R 0.11 2.8 1200V (V ), 200 Ampere Dual CES G 0.16 4.0 SM6 M6 IGBTMOD Power Module. H 0.24 6.0 T 0.26 Dia. 6.5 Dia. Current Rating V CES J 0.59 15.0 U 0.002 0.05 Type Amperes Volts (x 50) K 0.55 14.0 CM 200 24 5757Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24H Dual IGBTMOD U-Series Module 200 Amperes/1200 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM200DU-24H Units Junction Temperature T -40 to 150 C j Storage Temperature T -40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage (C-E SHORT) V 20 Volts GES Collector Current (T = 25C) I 200 Amperes c C Peak Collector Current (T 150C) I 400* Amperes j CM Emitter Current** (T = 25C) I 200 Amperes c E Peak Emitter Current** I 400* Amperes EM Maximum Collector Dissipation (T = 25C) P 1130 Watts c c Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts iso * Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1 mA CES CE CES GE Gate Leakage Voltage I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 20mA, V = 10V 4.5 6 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 200A, V = 15V, T = 25C 2.9 3.7 Volts CE(sat) C GE j I = 200A, V = 15V, T = 125C 2.85 Volts C GE j Total Gate Charge Q V = 600V, I = 200A, V = 15V 750 nC G CC C GE Emitter-Collector Voltage* V I = 200A, V = 0V 3.2 Volts EC E GE * Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T rating. j j(max) Dynamic Electrical Characteristics, TT = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 30 nf ies Output Capacitance C V = 10V, V = 0V 10.5 nf oes CE GE Reverse Transfer Capacitance C 6 nf res Resistive Turn-on Delay Time t V = 600V, I = 200A, 200 ns d(on) CC C Load Rise Time t V = V = 15V, 300 ns r GE1 GE2 Switch Turn-off Delay Time t R = 1.6V, Resistive 300 ns d(off) G Times Fall Time t Load Switching Operation 350 ns f Diode Reverse Recovery Time t I = 200A, di /dt = -400A/s 300 ns rr E E Diode Reverse Recovery Charge Q I = 200A, di /dt = -400A/s 1.1 C rr E E Thermal and Mechanical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R Q Per IGBT 1/2 Module 0.11 C/W th(j-c) Thermal Resistance, Junction to Case R D Per FWDi 1/2 Module 0.18 C/W th(j-c) Contact Thermal Resistance R Per Module, Thermal Grease Applied 0.020 C/W th(c-f) 5858