The ME7804S-G is a low-threshold voltage, surface-mount, dual N-channel MOSFET in a 1.6 mm x 1.6 mm x 0.45 mm DFN-8-EP(3.3x3.3) package. It is RoHS compliant, and manufactured by MQTSUKI. The device features an advanced and reliable technology that offers excellent low on-resistance and fast switching performance. It has a maximum drain current of 3.1 A (RDS ON= 2.5 mOhms @ VGS= 4.5 V), and has a minimum threshold voltage of 1.4 V. In addition, it features over-current protection, over-temperature protection, charge pump, and ESD protection. This part is ideal for applications requiring low on-resistance, low gate charge, fast switching, robustness, and low energy consumption.